HETEROEPITAXY OF INSB ON SILICON BY METALORGANIC MAGNETRON SPUTTERING

被引：35

作者：

RAO, TS ^{[1
]}

WEBB, JB ^{[1
]}

HOUGHTON, DC ^{[1
]}

BARIBEAU, JM ^{[1
]}

MOORE, WT ^{[1
]}

NOAD, JP ^{[1
]}

机构：

[1] COMMUN RES CTR,ADV DEVICES & RELIABIL DIRECTORATE,OTTAWA K2H 8S2,ONTARIO,CANADA

来源：

关键词：

D O I：

10.1063/1.100123

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：51 / 53

页数：3

共 11 条

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[2] FAN JCC, 1987, HETEROEPITAXY SILICO, V2
[3] THE GROWTH OF GALLIUM-ARSENIDE ON SI(100) BY MOLECULAR-BEAM EPITAXY
MOORE, WT
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[J]. CANADIAN JOURNAL OF PHYSICS, 1987, 65 (08) : 904 - 908
[4] PROPERTIES OF MBE GROWN INSB AND INSB1-XBIX
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GREGGI, J
TAKEI, WJ
FRANCOMBE, MH
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (02): : 558 - 561
[5] ORIAS G, 1986, SPIE J, V627, P408
[6] RAO TS, 1987, IN PRESS THIN SOLID
[7] ROUAN D, 1985, SPIE J, V590, P348
[8] Webb J. B., 1987, Chemtronics, V2, P3
[9] DEPOSITION OF INDIUM-ANTIMONIDE FILMS BY METALORGANIC MAGNETRON SPUTTERING
WEBB, JB
HALPIN, C
[J]. APPLIED PHYSICS LETTERS, 1985, 47 (08) : 831 - 833
[10] THE STRUCTURAL AND COMPOSITIONAL CHARACTERIZATION OF INSB FILMS PREPARED BY METALORGANIC MAGNETRON SPUTTERING
WEBB, JB
HALPIN, C
NOAD, JP
[J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (08) : 2949 - 2953