THE GROWTH OF GALLIUM-ARSENIDE ON SI(100) BY MOLECULAR-BEAM EPITAXY

被引：2

作者：

MOORE, WT ^{[1
]}

DEVINE, RLS ^{[1
]}

MAIGNE, P ^{[1
]}

HOUGHTON, DC ^{[1
]}

BARIBEAU, JM ^{[1
]}

DENHOFF, MW ^{[1
]}

JACKMAN, TE ^{[1
]}

KORNELSEN, EV ^{[1
]}

SPRINGTHORPE, AJ ^{[1
]}

MANDEVILLE, P ^{[1
]}

机构：

[1] BELL NO RES,OTTAWA K1Y 4H7,ONTARIO,CANADA

来源：

CANADIAN JOURNAL OF PHYSICS | 1987年 / 65卷 / 08期

关键词：

D O I：

10.1139/p87-141

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：904 / 908

页数：5

共 11 条

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[4] GAAS LIGHT-EMITTING-DIODES FABRICATED ON GE-COATED SI SUBSTRATES [J].

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[5] MOLECULAR-BEAM EPITAXY OF CONTROLLED SINGLE DOMAIN GAAS ON SI (100) [J].

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[6]

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[7] GROWTH AND CHARACTERIZATION OF GAAS ON SI SUBSTRATES GROWN BY MOLECULAR-BEAM EPITAXY [J].

MANDEVILLE, P ;

SPRINGTHORPE, AJ ;

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BRUCE, RA ;

CURRIE, JF ;

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CANADIAN JOURNAL OF PHYSICS, 1987, 65 (08) :897-903

[8] METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS FABRICATED IN GAAS-LAYERS GROWN DIRECTLY ON SI SUBSTRATES BY MOLECULAR-BEAM EPITAXY [J].

METZE, GM ;

CHOI, HK ;

TSAUR, BY .

APPLIED PHYSICS LETTERS, 1984, 45 (10) :1107-1109

[9]

SAKI S, 1986, MATER RES SOC S P, V67, P15

[10]

TURNER GW, 1986, TMS MRS PUBLICATIONS, P235

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