SILICON OPTICAL CONSTANTS IN INFRARED

[21] SCHUMANN PA, 1970, SOLID STATE TECHNOL, V13, P50

[22] INFRARED INTERFERENCE METHOD OF MEASURING EPITAXIAL LAYER THICKNESS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (03) : 409 - &

[23] SCHUMANN PA, 1969, JUN C SIL PROC NBS

[24] SCHUMANN PA, TO BE PUBLISHED

[25] EFFECT OF HEAT TREATMENT ON OPTICAL PROPERTIES OF HEAVILY DOPED SILICON + GERMANIUM [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (01) : 206 - &

[26] INTERFERENCE METHOD FOR MEASURING THICKNESS OFEPITAXIALLY GROWN FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 (04) : 744 - &

[27] DETERMINATION OF OPTICAL CONSTANTS AND CARRIER EFFECTIVE MASS OF SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1957, 106 (05): : 882 - 890

[28] TONG AH, 1970, OCT ATL CIT M EL SOC

[29] MEASUREMENT OF IMPURITY PROFILE EFFECT IN N ON N+ SILICON EPITAXIAL LAYERS [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1969, 27 (04) : 1077 - &

[30] UKHANOV YI, 1963, SOV PHYS-SOL STATE, V4, P2010

[21] SCHUMANN PA, 1970, SOLID STATE TECHNOL, V13, P50

[22] INFRARED INTERFERENCE METHOD OF MEASURING EPITAXIAL LAYER THICKNESS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (03) : 409 - &

[23] SCHUMANN PA, 1969, JUN C SIL PROC NBS

[24] SCHUMANN PA, TO BE PUBLISHED

[25] EFFECT OF HEAT TREATMENT ON OPTICAL PROPERTIES OF HEAVILY DOPED SILICON + GERMANIUM [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (01) : 206 - &

[26] INTERFERENCE METHOD FOR MEASURING THICKNESS OFEPITAXIALLY GROWN FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 (04) : 744 - &

[27] DETERMINATION OF OPTICAL CONSTANTS AND CARRIER EFFECTIVE MASS OF SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1957, 106 (05): : 882 - 890

[28] TONG AH, 1970, OCT ATL CIT M EL SOC

[29] MEASUREMENT OF IMPURITY PROFILE EFFECT IN N ON N+ SILICON EPITAXIAL LAYERS [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1969, 27 (04) : 1077 - &

[30] UKHANOV YI, 1963, SOV PHYS-SOL STATE, V4, P2010