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INFRARED INTERFERENCE METHOD OF MEASURING EPITAXIAL LAYER THICKNESS
被引:17
作者
:
SCHUMANN, PA
论文数:
0
引用数:
0
h-index:
0
SCHUMANN, PA
机构
:
来源
:
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
|
1969年
/ 116卷
/ 03期
关键词
:
D O I
:
10.1149/1.2411860
中图分类号
:
O646 [电化学、电解、磁化学];
学科分类号
:
081704 ;
摘要
:
引用
收藏
页码:409 / &
相关论文
共 15 条
[1]
INFRARED REFLECTIVITY OF N ON N+ SI WAFERS
ABE, T
论文数:
0
引用数:
0
h-index:
0
ABE, T
KATO, T
论文数:
0
引用数:
0
h-index:
0
KATO, T
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1965,
4
(10)
: 742
-
&
[2]
THICKNESS MEASUREMENT OF EPITAXIAL FILMS BY THE INFRARED INTERFERENCE METHOD
ALBERT, MP
论文数:
0
引用数:
0
h-index:
0
ALBERT, MP
COMBS, JF
论文数:
0
引用数:
0
h-index:
0
COMBS, JF
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1962,
109
(08)
: 709
-
713
[3]
DOO V, UNPUBLISHED DATA
[4]
GARDNER EE, 1967, MEAS TECH, P258
[5]
GROCHOWSKI EG, 1961, OCT EL SOC M DETR
[6]
A SPREADING RESISTANCE TECHNIQUE FOR RESISTIVITY MEASUREMENTS ON SILICON
MAZUR, RG
论文数:
0
引用数:
0
h-index:
0
MAZUR, RG
DICKEY, DH
论文数:
0
引用数:
0
h-index:
0
DICKEY, DH
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1966,
113
(03)
: 255
-
&
[7]
INFRARED INTERFERENCE SPECTRA OBSERVED IN SILICON EPITAXIAL WAFERS
SATO, K
论文数:
0
引用数:
0
h-index:
0
SATO, K
ISHIKAWA, Y
论文数:
0
引用数:
0
h-index:
0
ISHIKAWA, Y
SUGAWARA, K
论文数:
0
引用数:
0
h-index:
0
SUGAWARA, K
[J].
SOLID-STATE ELECTRONICS,
1966,
9
(08)
: 771
-
&
[8]
PHASE SHIFT CORRECTIONS FOR INFRARED INTERFERENCE MEASUREMENT OF EPITAXIAL LAYER THICKNESS
SCHUMANN, PA
论文数:
0
引用数:
0
h-index:
0
SCHUMANN, PA
PHILLIPS, RP
论文数:
0
引用数:
0
h-index:
0
PHILLIPS, RP
OLSHEFSK.PJ
论文数:
0
引用数:
0
h-index:
0
OLSHEFSK.PJ
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1966,
113
(04)
: 368
-
&
[9]
COMPARISON OF CLASSICAL APPROXIMATIONS TO FREE CARRIER ABSORPTION IN SEMICONDUCTORS
SCHUMANN, PA
论文数:
0
引用数:
0
h-index:
0
SCHUMANN, PA
PHILLIPS, RP
论文数:
0
引用数:
0
h-index:
0
PHILLIPS, RP
[J].
SOLID-STATE ELECTRONICS,
1967,
10
(09)
: 943
-
&
[10]
SCHUMANN PA, 1965, TR22182 IBM TECH REP
←
1
2
→
共 15 条
[1]
INFRARED REFLECTIVITY OF N ON N+ SI WAFERS
ABE, T
论文数:
0
引用数:
0
h-index:
0
ABE, T
KATO, T
论文数:
0
引用数:
0
h-index:
0
KATO, T
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS,
1965,
4
(10)
: 742
-
&
[2]
THICKNESS MEASUREMENT OF EPITAXIAL FILMS BY THE INFRARED INTERFERENCE METHOD
ALBERT, MP
论文数:
0
引用数:
0
h-index:
0
ALBERT, MP
COMBS, JF
论文数:
0
引用数:
0
h-index:
0
COMBS, JF
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1962,
109
(08)
: 709
-
713
[3]
DOO V, UNPUBLISHED DATA
[4]
GARDNER EE, 1967, MEAS TECH, P258
[5]
GROCHOWSKI EG, 1961, OCT EL SOC M DETR
[6]
A SPREADING RESISTANCE TECHNIQUE FOR RESISTIVITY MEASUREMENTS ON SILICON
MAZUR, RG
论文数:
0
引用数:
0
h-index:
0
MAZUR, RG
DICKEY, DH
论文数:
0
引用数:
0
h-index:
0
DICKEY, DH
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1966,
113
(03)
: 255
-
&
[7]
INFRARED INTERFERENCE SPECTRA OBSERVED IN SILICON EPITAXIAL WAFERS
SATO, K
论文数:
0
引用数:
0
h-index:
0
SATO, K
ISHIKAWA, Y
论文数:
0
引用数:
0
h-index:
0
ISHIKAWA, Y
SUGAWARA, K
论文数:
0
引用数:
0
h-index:
0
SUGAWARA, K
[J].
SOLID-STATE ELECTRONICS,
1966,
9
(08)
: 771
-
&
[8]
PHASE SHIFT CORRECTIONS FOR INFRARED INTERFERENCE MEASUREMENT OF EPITAXIAL LAYER THICKNESS
SCHUMANN, PA
论文数:
0
引用数:
0
h-index:
0
SCHUMANN, PA
PHILLIPS, RP
论文数:
0
引用数:
0
h-index:
0
PHILLIPS, RP
OLSHEFSK.PJ
论文数:
0
引用数:
0
h-index:
0
OLSHEFSK.PJ
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1966,
113
(04)
: 368
-
&
[9]
COMPARISON OF CLASSICAL APPROXIMATIONS TO FREE CARRIER ABSORPTION IN SEMICONDUCTORS
SCHUMANN, PA
论文数:
0
引用数:
0
h-index:
0
SCHUMANN, PA
PHILLIPS, RP
论文数:
0
引用数:
0
h-index:
0
PHILLIPS, RP
[J].
SOLID-STATE ELECTRONICS,
1967,
10
(09)
: 943
-
&
[10]
SCHUMANN PA, 1965, TR22182 IBM TECH REP
←
1
2
→