REMOVAL OF THE PROCESS-INDUCED FLUORINE ASSOCIATED TO CHEMICAL VAPOR-DEPOSITION OF TUNGSTEN ONTO A POLYCRYSTALLINE SILICON GATE STRUCTURE BY HEAT-TREATMENT IN A HYDROGEN-CONTAINING ATMOSPHERE

Tungsten was deposited from a gas mixture of hydrogen and tungsten hexafluoride onto a polycrystalline silicon gate structure in a chemical vapor deposition system. During the deposition process fluorine was also deposited as an undesired impurity. In order to remove the fluorine, heat treatments in the temperature range 550-1050 °C were performed in a hydrogen atmosphere. By this treatment it is possible to form volatile hydrofluoric acid and hence remove fluorine from the structure. Nuclear-resonance-broadening technique and secondary ion mass spectrometry were used for the analysis of fluorine. Fluorine was detected in all the samples except for the sample heat treated at 1050 °C. Moreover, etching of the polycrystalline silicon was observed. The gettering of fluorine, the etching of silicon and the observed formation of tungsten disilicide at 650 °C are discussed with respect to conceivable mechanisms. A thermodynamic study supporting the interpretations is also included.