REMOVAL OF THE PROCESS-INDUCED FLUORINE ASSOCIATED TO CHEMICAL VAPOR-DEPOSITION OF TUNGSTEN ONTO A POLYCRYSTALLINE SILICON GATE STRUCTURE BY HEAT-TREATMENT IN A HYDROGEN-CONTAINING ATMOSPHERE

被引:2
作者
ERIKSSON, T
CARLSSON, JO
MOHADJERI, B
OSTLING, M
DHEURLE, FM
PETERSSON, CS
KEINONEN, J
机构
[1] UNIV UPPSALA,DEPT CHEM,THIN FILM & SURFACE CHEM GRP,S-75121 UPPSALA,SWEDEN
[2] UNIV HELSINKI,ACCELERATOR LAB,SF-00550 HELSINKI,FINLAND
关键词
D O I
10.1063/1.346566
中图分类号
O59 [应用物理学];
学科分类号
摘要
Tungsten was deposited from a gas mixture of hydrogen and tungsten hexafluoride onto a polycrystalline silicon gate structure in a chemical vapor deposition system. During the deposition process fluorine was also deposited as an undesired impurity. In order to remove the fluorine, heat treatments in the temperature range 550-1050 °C were performed in a hydrogen atmosphere. By this treatment it is possible to form volatile hydrofluoric acid and hence remove fluorine from the structure. Nuclear-resonance-broadening technique and secondary ion mass spectrometry were used for the analysis of fluorine. Fluorine was detected in all the samples except for the sample heat treated at 1050 °C. Moreover, etching of the polycrystalline silicon was observed. The gettering of fluorine, the etching of silicon and the observed formation of tungsten disilicide at 650 °C are discussed with respect to conceivable mechanisms. A thermodynamic study supporting the interpretations is also included.
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页码:2112 / 2120
页数:9
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