THE IMPORTANCE OF FREE-RADICAL RECOMBINATION REACTIONS IN CF4 O2 PLASMA-ETCHING OF SILICON

被引：18

作者：

DALVIE, M ^{[1
]}

JENSEN, KF ^{[1
]}

机构：

[1] UNIV MINNESOTA,DEPT CHEM ENGN & MAT SCI,MINNEAPOLIS,MN 55455

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1990年 / 8卷 / 03期

关键词：

D O I：

10.1116/1.576780

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The importance of free radical recombination reactions of F in CF4/O2 plasma etching of Si is explored in a combined experimental and modeling study of a single wafer etcher. The F atom concentration profiles in the reactor, as well as the silicon etch rate profiles, are strongly influenced by the recombination reactions. The surface recombination reaction is more important than the gas phase recombination reactions in determining overall system behavior. The effects of the homogeneous as well as heterogeneous recombination reaction diminishes with increasing flow rate. This is due to combined residence time and transport effects. © 1990, American Vacuum Society. All rights reserved.

引用

页码：1648 / 1653

页数：6

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