UNIFORMITY OF ETCHING IN PARALLEL PLATE PLASMA REACTORS

被引:43
作者
ECONOMOU, DJ
PARK, SK
WILLIAMS, GD
机构
关键词
D O I
10.1149/1.2096584
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
引用
收藏
页码:188 / 198
页数:11
相关论文
共 37 条
[1]   TRANSIENT-BEHAVIOR DURING FILM REMOVAL IN DIFFUSION-CONTROLLED PLASMA-ETCHING [J].
ALKIRE, RC ;
ECONOMOU, DJ .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (03) :648-656
[2]   LARGE-SIGNAL TIME-DOMAIN MODELING OF LOW-PRESSURE RF GLOW-DISCHARGES [J].
BARNES, MS ;
COLTER, TJ ;
ELTA, ME .
JOURNAL OF APPLIED PHYSICS, 1987, 61 (01) :81-89
[3]  
BELL AT, 1974, TECHNIQUES APPLICATI
[4]  
Coburn J.W., 1982, PLASMA CHEM PLASMA P, V2, P1, DOI 10.1007/BF00566856
[5]   DIAGNOSTICS IN PLASMA PROCESSING [J].
COBURN, JW .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (03) :1830-1832
[6]   OPTICAL-EMISSION SPECTROSCOPY OF REACTIVE PLASMAS - A METHOD FOR CORRELATING EMISSION INTENSITIES TO REACTIVE PARTICLE DENSITY [J].
COBURN, JW ;
CHEN, M .
JOURNAL OF APPLIED PHYSICS, 1980, 51 (06) :3134-3136
[7]  
CREMERS CJ, 1966, APPL OPTICS, V5, P1075
[8]   MODELING OF REACTORS FOR PLASMA PROCESSING .1. SILICON ETCHING BY CF4 IN A RADIAL FLOW REACTOR [J].
DALVIE, M ;
JENSEN, KF ;
GRAVES, DB .
CHEMICAL ENGINEERING SCIENCE, 1986, 41 (04) :653-660
[9]   THE EFFECT OF TEMPERATURE AND FLOW-RATE ON ALUMINUM ETCH RATES IN RF PLASMAS [J].
DANNER, DA ;
HESS, DW .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (01) :151-155
[10]   ANISOTROPIC ETCHING OF SIO2 IN LOW-FREQUENCY CF4/O2 AND NF3/AR PLASMAS [J].
DONNELLY, VM ;
FLAMM, DL ;
DAUTREMONTSMITH, WC ;
WERDER, DJ .
JOURNAL OF APPLIED PHYSICS, 1984, 55 (01) :242-252