DEFECTS IN ARSENIC-IMPLANTED P-N-JUNCTIONS

被引：2

作者：

BOGARDUS, EH ^{[1
]}

POPONIAK, MR ^{[1
]}

机构：

[1] IBM CORP,SYST PROD DIV,E FISHKILL LAB,HOPEWELL JUNCTION,NY 12533

来源：

APPLIED PHYSICS LETTERS | 1973年 / 23卷 / 10期

关键词：

D O I：

10.1063/1.1654746

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：553 / 555

页数：3

共 17 条

[1]

Crowder B. L., 1970, Radiation Effects, V6, P63, DOI 10.1080/00337577008235047

[2] ROLE OF DAMAGE IN ANNEALING CHARACTERISTICS OF ION IMPLANTED SI [J].

CROWDER, BL .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (05) :671-&

[3]

EIRUGDAVIES D, 1971, SOLID STATE ELECTRON, V14, P975

[4] METAL PRECIPITATES IN SILICON P-N JUNCTIONS [J].

GOETZBERGER, A ;

SHOCKLEY, W .

JOURNAL OF APPLIED PHYSICS, 1960, 31 (10) :1821-1824

[5] ION-IMPLANTATION DAMAGE GETTERING EFFECT IN SILICON PHOTODIODE ARRAY CAMERA TARGET [J].

HSIEH, CM ;

MATHEWS, JR ;

SEIDEL, HD ;

PICKAR, KA ;

DRUM, CM .

APPLIED PHYSICS LETTERS, 1973, 22 (05) :238-240

[6] HABIT AND MORPHOLOGY OF COPPER PRECIPITATES IN SILICON [J].

HU, SM ;

POPONIAK, MR .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (05) :2067-&

[7]

JOHNSON WS, 1969, PROJECTED RANGE STAT

[8]

KEENAN WA, 1973, MAY SEM SIL S CHIC M

[9] ELECTRICAL PROPERTIES OF COPPER SEGREGATES IN SILICON P-N JUNCTIONS [J].

LAWRENCE, JE .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (08) :796-&

[10]

MASTERS B, 1971, ION IMPLANTATION

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