SI-GAAS(001) SUPERLATTICE STRUCTURE

被引：13

作者：

SORBA, L

BRATINA, G

FRANCIOSI, A

TAPFER, L

SCAMARCIO, G

SPAGNOLO, V

MIGLIORI, A

MERLI, P

MOLINARI, E

机构：

[1] UNIV MINNESOTA, DEPT CHEM ENGN & MAT SCI, MINNEAPOLIS, MN 55455 USA

[2] CTR NAZL RIC & SVILUPPO MAT, I-72023 MESAGNE, ITALY

[3] MAX PLANCK INST FESTKORPERFORSCH, W-7000 STUTTGART 80, GERMANY

[4] UNIV BARI, DIPARTIMENTO FIS, I-70100 BARI, ITALY

[5] CNR, IST LAMEL, I-40126 BOLOGNA, ITALY

[6] CNR, IST ACUST O M CORBINO, I-00189 ROME, ITALY

来源：

JOURNAL OF CRYSTAL GROWTH | 1993年 / 127卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(93)90590-S

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We examined the structural properties of Si layers embedded in GaAs and AlAs-GaAs structures by means of X-ray diffraction and transmission electron microscopy to identify growth parameters for the synthesis of Si-GaAs superlattices. We find that localized pseudomorphic Si layers can be obtained by molecular beam epitaxy at 500-540-degrees-C up to a thickness of 7-8 monolayers. Fifteen period Si-GaAs(001) superlattices involving Si layers 2-3 monolayer thick were then synthesized using the same growth parameters. X-ray diffraction measurements and Raman spectroscopy studies confirm that pseudomorphic growth and relatively abrupt interfaces were achieved.

引用

页码：121 / 125

页数：5

共 24 条

[1] CHARACTERIZATION OF GAAS GROWN ON SI EPITAXIAL LAYERS ON GAAS SUBSTRATES [J].