NEW ROUTES TO CU-PATTERNED TEFLON SUBSTRATES

被引：11

作者：

HAMPDENSMITH, MJ

KODAS, TT

RYE, RR

机构：

[1] UNIV NEW MEXICO, E22R,CTR MICROENGN CERAM,ALBUQUERQUE,NM 87131

[2] SANDIA NATL LABS,DIV 1114,ALBUQUERQUE,NM 87185

来源：

ADVANCED MATERIALS | 1992年 / 4卷 / 7-8期

关键词：

D O I：

10.1002/adma.19920040718

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Research News: In microelectronics, copper conductors and Teflon substrates are the materials of choice in many-applications due to the high conductivity of copper and the low dielectric constant of Teflon. The nature of Teflon, however, results in low adhesion strength, which makes a multi-step Cu-deposition process necessary. Here, an alternative, selective CVD, which can produce smaller feature sizes and reduces the need for wet etching, is presented and explained.

引用

页码：524 / 526

页数：3

共 22 条

[11]

NORMAN JAT, 1991, J PHYS, V4, pC2

[12] CHEMICAL VAPOR-DEPOSITION OF COPPER FROM 1,5-CYCLOOCTADIENE COPPER(I) HEXAFLUOROACETYLACETONATE [J].

REYNOLDS, SK ;

SMART, CJ ;

BARAN, EF ;

BAUM, TH ;

LARSON, CE ;

BROCK, PJ .

APPLIED PHYSICS LETTERS, 1991, 59 (18) :2332-2334

[13]

Rye R. R., 1992, Advanced Metallization for ULSI Applications (Formerly Workshop on Tungsten and Other Advanced Metals for ULSI Applications) Proceedings of the Conference, P421

[14] ELECTRON-IRRADIATION OF POLY(TETRAFLUOROETHYLENE) - EFFECT ON ADHESION AND COMPARISON WITH X-RAYS [J].