NEW ROUTES TO CU-PATTERNED TEFLON SUBSTRATES

被引:11
作者
HAMPDENSMITH, MJ
KODAS, TT
RYE, RR
机构
[1] UNIV NEW MEXICO, E22R,CTR MICROENGN CERAM,ALBUQUERQUE,NM 87131
[2] SANDIA NATL LABS,DIV 1114,ALBUQUERQUE,NM 87185
关键词
D O I
10.1002/adma.19920040718
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Research News: In microelectronics, copper conductors and Teflon substrates are the materials of choice in many-applications due to the high conductivity of copper and the low dielectric constant of Teflon. The nature of Teflon, however, results in low adhesion strength, which makes a multi-step Cu-deposition process necessary. Here, an alternative, selective CVD, which can produce smaller feature sizes and reduces the need for wet etching, is presented and explained.
引用
收藏
页码:524 / 526
页数:3
相关论文
共 22 条
[21]   CHEMICAL VAPOR-DEPOSITION OF COPPER FROM COPPER (II) HEXAFLUOROACETYLACETONATE [J].
TEMPLE, D ;
REISMAN, A .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1989, 136 (11) :3525-3529
[22]   VAPOR DEPOSITION OF METALS BY HYDROGEN REDUCTION OF METAL CHELATES [J].
VANHEMER.RL ;
SPENDLOV.LB ;
SIEVERS, RE .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (11) :1123-&