共 22 条
NEW ROUTES TO CU-PATTERNED TEFLON SUBSTRATES
被引:11
作者:
HAMPDENSMITH, MJ
KODAS, TT
RYE, RR
机构:
[1] UNIV NEW MEXICO, E22R,CTR MICROENGN CERAM,ALBUQUERQUE,NM 87131
[2] SANDIA NATL LABS,DIV 1114,ALBUQUERQUE,NM 87185
关键词:
D O I:
10.1002/adma.19920040718
中图分类号:
O6 [化学];
学科分类号:
0703 ;
摘要:
Research News: In microelectronics, copper conductors and Teflon substrates are the materials of choice in many-applications due to the high conductivity of copper and the low dielectric constant of Teflon. The nature of Teflon, however, results in low adhesion strength, which makes a multi-step Cu-deposition process necessary. Here, an alternative, selective CVD, which can produce smaller feature sizes and reduces the need for wet etching, is presented and explained.
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页码:524 / 526
页数:3
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