LASER-INDUCED LUMINESCENCE BAND IN GE-DOPED (AL,GA)AS MULTILAYER STRUCTURES

被引：9

作者：

GILGEN, HH

SALATHE, RP

RYTZFROIDEVAUX, Y

机构：

来源：

APPLIED PHYSICS LETTERS | 1981年 / 38卷 / 04期

关键词：

D O I：

10.1063/1.92311

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：241 / 243

页数：3

共 9 条

[1] THERMAL-CONDUCTIVITY OF GA1-XALXAS ALLOYS [J].

AFROMOWITZ, MA .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (03) :1292-1294

[2]

ALFEROV ZI, 1971, SOV PHYS SEMICOND+, V5, P987

[3]

FERRI SD, 1979, 1978 LAS SOL INT LAS

[4]

GILGEN HH, 1980 M SWISS PHYS SO

[5] TEMPERATURE RISE INDUCED BY A LASER-BEAM .2. NON-LINEAR CASE [J].

LAX, M .

APPLIED PHYSICS LETTERS, 1978, 33 (08) :786-788

[6] OPTICAL WAVEGUIDES IN GAAS-AIGAAS EPITAXIAL LAYERS [J].

LOGAN, RA ;

REINHART, FK .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (09) :4172-4176

[7] PHOTO-LUMINESCENCE OF THERMALLY TREATED N-TYPE SI-DOPED GAAS [J].

LUM, WY ;

WIEDER, HH .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (12) :6187-6188

[8] FABRICATION OF MESA-TYPE WAVEGUIDES IN ALGAAS STRUCTURES BY LASER IRRADIATION [J].

SALATHE, RP ;

GILGEN, HH ;

RYTZFROIDEVAUX, Y ;

LUTHY, W ;

WEBER, HP .

APPLIED PHYSICS LETTERS, 1979, 35 (07) :543-545

[9]

WILLARDSON RK, 1968, SEMICONDUCTORS SEMIM, V4, P79

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