HYDROGEN-INDUCED DLTS SIGNAL IN PD/NORMAL-SI SCHOTTKY DIODES

被引：24

作者：

PETTY, MC

机构：

来源：

ELECTRONICS LETTERS | 1982年 / 18卷 / 08期

关键词：

D O I：

10.1049/el:19820214

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：314 / 316

页数：3

相关论文

共 9 条

[1] DiMaria D.J., 1978, PHYS SIO2 ITS INTERF, P160, DOI [10.1016/B978-0-08-023049-8.50034-8, DOI 10.1016/B978-0-08-023049-8.50034-8]
[2] KERAMATI B, 1980, THESIS U PENNSYLVANI
[3] KERAMATI B, 1978, PHYSICS SIO2 ITS INT, P459
[4] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS
LANG, DV
[J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) : 3023 - 3032
[5] HYDROGEN SENSITIVE MOS-STRUCTURES .1. PRINCIPLES AND APPLICATIONS
LUNDSTROM, I
[J]. SENSORS AND ACTUATORS, 1981, 1 (04): : 403 - 426
[6] HYDROGEN SENSITIVITY OF PALLADIUM-THIN-OXIDE-SILICON SCHOTTKY BARRIERS
SHIVARAMAN, MS
LUNDSTROM, I
SVENSSON, C
HAMMARSTEN, H
[J]. ELECTRONICS LETTERS, 1976, 12 (18) : 483 - 484
[7] HYDROGEN-SENSITIVE PALLADIUM GATE MOS CAPACITORS
STEELE, MC
HILE, JW
MACIVER, BA
[J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (06) : 2537 - 2538
[8] MOS INTERFACE-STATE DENSITY-MEASUREMENTS USING TRANSIENT CAPACITANCE SPECTROSCOPY
WANG, KL
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (12) : 2231 - 2239
[9] DEEP LEVEL TRANSIENT SPECTROSCOPY OF BULK TRAPS AND INTERFACE STATES IN SI MOS DIODES
YAMASAKI, K
YOSHIDA, M
SUGANO, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1979, 18 (01) : 113 - 122