MOS INTERFACE-STATE DENSITY-MEASUREMENTS USING TRANSIENT CAPACITANCE SPECTROSCOPY

被引：40

作者：

WANG, KL ^{[1
]}

机构：

[1] GE, CTR RES & DEV, SCHENECTADY, NY 12301 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1980年 / 27卷 / 12期

关键词：

D O I：

10.1109/T-ED.1980.20257

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：2231 / 2239

页数：9

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