MOS INTERFACE-STATE DENSITY-MEASUREMENTS USING TRANSIENT CAPACITANCE SPECTROSCOPY

被引：40

作者：

WANG, KL ^{[1
]}

机构：

[1] GE, CTR RES & DEV, SCHENECTADY, NY 12301 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1980年 / 27卷 / 12期

关键词：

D O I：

10.1109/T-ED.1980.20257

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2231 / 2239

页数：9

共 36 条

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[24] TRANSIENT CAPACITANCE MEASUREMENTS OF INTERFACE STATES ON THE INTENTIONALLY CONTAMINATED SI-SIO2 INTERFACE
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[J]. APPLIED PHYSICS, 1979, 18 (02): : 169 - 175
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[26] SPICER WE, 1979, J VAC SCI TECHNOL, V16
[27] SZE SM, 1969, PHYSICS SEMICONDUCTO, P444
[28] AN INVESTIGATION OF SURFACE STATES AT A SILICON SILICON OXIDE INTERFACE EMPLOYING METAL OXIDE SILICON DIODES
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[J]. SOLID-STATE ELECTRONICS, 1962, 5 (SEP-O) : 285 - 299
[29] INTERFACE-STATE PARAMETER DETERMINATION BY DEEP-LEVEL TRANSIENT SPECTROSCOPY
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[J]. APPLIED PHYSICS LETTERS, 1980, 36 (06) : 462 - 464
[30] DETERMINATION OF INTERFACE AND BULK-TRAP STATES OF IGFETS USING DEEP-LEVEL TRANSIENT SPECTROSCOPY
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[J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (10) : 4574 - 4577

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