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INTERFACE-STATE PARAMETER DETERMINATION BY DEEP-LEVEL TRANSIENT SPECTROSCOPY
被引:32
作者
:
TREDWELL, TJ
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF LOS ANGELES,DEPT ELECT SCI & ENGN,LOS ANGELES,CA 90024
UNIV CALIF LOS ANGELES,DEPT ELECT SCI & ENGN,LOS ANGELES,CA 90024
TREDWELL, TJ
[
1
]
VISWANATHAN, CR
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF LOS ANGELES,DEPT ELECT SCI & ENGN,LOS ANGELES,CA 90024
UNIV CALIF LOS ANGELES,DEPT ELECT SCI & ENGN,LOS ANGELES,CA 90024
VISWANATHAN, CR
[
1
]
机构
:
[1]
UNIV CALIF LOS ANGELES,DEPT ELECT SCI & ENGN,LOS ANGELES,CA 90024
来源
:
APPLIED PHYSICS LETTERS
|
1980年
/ 36卷
/ 06期
关键词
:
D O I
:
10.1063/1.91507
中图分类号
:
O59 [应用物理学];
学科分类号
:
摘要
:
引用
收藏
页码:462 / 464
页数:3
相关论文
共 10 条
[1]
INTERFACE STATES IN SI-SIO2 INTERFACES
DEULING, H
论文数:
0
引用数:
0
h-index:
0
DEULING, H
KLAUSMANN, E
论文数:
0
引用数:
0
h-index:
0
KLAUSMANN, E
GOETZBERGER, A
论文数:
0
引用数:
0
h-index:
0
GOETZBERGER, A
[J].
SOLID-STATE ELECTRONICS,
1972,
15
(05)
: 559
-
+
[2]
ENERGY-RESOLVED DLTS MEASUREMENT OF INTERFACE STATES IN MIS STRUCTURES
JOHNSON, NM
论文数:
0
引用数:
0
h-index:
0
机构:
Xerox Palo Alto Research Center, Palo Alto
JOHNSON, NM
[J].
APPLIED PHYSICS LETTERS,
1979,
34
(11)
: 802
-
804
[3]
JOHNSON NM, 1978, P INT C PHYSICS SIO2
[4]
TRANSIENT CAPACITANCE MEASUREMENTS OF HOLE EMISSION FROM INTERFACE STATES IN MOS STRUCTURES
SCHULZ, M
论文数:
0
引用数:
0
h-index:
0
机构:
XEROX CORP, PALO ALTO RES CTR, PALO ALTO, CA 94304 USA
XEROX CORP, PALO ALTO RES CTR, PALO ALTO, CA 94304 USA
SCHULZ, M
JOHNSON, NM
论文数:
0
引用数:
0
h-index:
0
机构:
XEROX CORP, PALO ALTO RES CTR, PALO ALTO, CA 94304 USA
XEROX CORP, PALO ALTO RES CTR, PALO ALTO, CA 94304 USA
JOHNSON, NM
[J].
APPLIED PHYSICS LETTERS,
1977,
31
(09)
: 622
-
625
[5]
EVIDENCE FOR MULTIPHONON EMISSION FROM INTERFACE STATES IN MOS STRUCTURES
SCHULZ, M
论文数:
0
引用数:
0
h-index:
0
SCHULZ, M
JOHNSON, NM
论文数:
0
引用数:
0
h-index:
0
JOHNSON, NM
[J].
SOLID STATE COMMUNICATIONS,
1978,
25
(07)
: 481
-
484
[6]
TRANSIENT CAPACITANCE MEASUREMENTS OF INTERFACE STATES ON THE INTENTIONALLY CONTAMINATED SI-SIO2 INTERFACE
SCHULZ, M
论文数:
0
引用数:
0
h-index:
0
机构:
FRAUNHOFER INST,INST ANGEW FESTKORPERPHYS,D-7800 FREIBURG,FED REP GER
FRAUNHOFER INST,INST ANGEW FESTKORPERPHYS,D-7800 FREIBURG,FED REP GER
SCHULZ, M
KLAUSMANN, E
论文数:
0
引用数:
0
h-index:
0
机构:
FRAUNHOFER INST,INST ANGEW FESTKORPERPHYS,D-7800 FREIBURG,FED REP GER
FRAUNHOFER INST,INST ANGEW FESTKORPERPHYS,D-7800 FREIBURG,FED REP GER
KLAUSMANN, E
[J].
APPLIED PHYSICS,
1979,
18
(02):
: 169
-
175
[7]
TREDWELL TJ, UNPUBLISHED
[8]
DETERMINATION OF INTERFACE STATE ENERGY DURING THE CAPTURE OF ELECTRONS AND HOLES USING DLTS
WANG, KL
论文数:
0
引用数:
0
h-index:
0
机构:
General Electric Corporate Research and Development Center, Schenectady
WANG, KL
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1979,
26
(05)
: 819
-
821
[9]
DETERMINATION OF INTERFACE AND BULK-TRAP STATES OF IGFETS USING DEEP-LEVEL TRANSIENT SPECTROSCOPY
WANG, KL
论文数:
0
引用数:
0
h-index:
0
机构:
GE, CORP RES & DEV, SCHENECTADY, NY 12301 USA
GE, CORP RES & DEV, SCHENECTADY, NY 12301 USA
WANG, KL
EVWARAYE, AO
论文数:
0
引用数:
0
h-index:
0
机构:
GE, CORP RES & DEV, SCHENECTADY, NY 12301 USA
GE, CORP RES & DEV, SCHENECTADY, NY 12301 USA
EVWARAYE, AO
[J].
JOURNAL OF APPLIED PHYSICS,
1976,
47
(10)
: 4574
-
4577
[10]
QUENCHED-IN BULK DEFECTS AND INTERFACE STATES IN MOS STRUCTURES MEASURED BY TRANSIENT CAPACITANCE SPECTROSCOPY
WANG, KL
论文数:
0
引用数:
0
h-index:
0
WANG, KL
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1978,
125
(10)
: 1664
-
1667
←
1
→
共 10 条
[1]
INTERFACE STATES IN SI-SIO2 INTERFACES
DEULING, H
论文数:
0
引用数:
0
h-index:
0
DEULING, H
KLAUSMANN, E
论文数:
0
引用数:
0
h-index:
0
KLAUSMANN, E
GOETZBERGER, A
论文数:
0
引用数:
0
h-index:
0
GOETZBERGER, A
[J].
SOLID-STATE ELECTRONICS,
1972,
15
(05)
: 559
-
+
[2]
ENERGY-RESOLVED DLTS MEASUREMENT OF INTERFACE STATES IN MIS STRUCTURES
JOHNSON, NM
论文数:
0
引用数:
0
h-index:
0
机构:
Xerox Palo Alto Research Center, Palo Alto
JOHNSON, NM
[J].
APPLIED PHYSICS LETTERS,
1979,
34
(11)
: 802
-
804
[3]
JOHNSON NM, 1978, P INT C PHYSICS SIO2
[4]
TRANSIENT CAPACITANCE MEASUREMENTS OF HOLE EMISSION FROM INTERFACE STATES IN MOS STRUCTURES
SCHULZ, M
论文数:
0
引用数:
0
h-index:
0
机构:
XEROX CORP, PALO ALTO RES CTR, PALO ALTO, CA 94304 USA
XEROX CORP, PALO ALTO RES CTR, PALO ALTO, CA 94304 USA
SCHULZ, M
JOHNSON, NM
论文数:
0
引用数:
0
h-index:
0
机构:
XEROX CORP, PALO ALTO RES CTR, PALO ALTO, CA 94304 USA
XEROX CORP, PALO ALTO RES CTR, PALO ALTO, CA 94304 USA
JOHNSON, NM
[J].
APPLIED PHYSICS LETTERS,
1977,
31
(09)
: 622
-
625
[5]
EVIDENCE FOR MULTIPHONON EMISSION FROM INTERFACE STATES IN MOS STRUCTURES
SCHULZ, M
论文数:
0
引用数:
0
h-index:
0
SCHULZ, M
JOHNSON, NM
论文数:
0
引用数:
0
h-index:
0
JOHNSON, NM
[J].
SOLID STATE COMMUNICATIONS,
1978,
25
(07)
: 481
-
484
[6]
TRANSIENT CAPACITANCE MEASUREMENTS OF INTERFACE STATES ON THE INTENTIONALLY CONTAMINATED SI-SIO2 INTERFACE
SCHULZ, M
论文数:
0
引用数:
0
h-index:
0
机构:
FRAUNHOFER INST,INST ANGEW FESTKORPERPHYS,D-7800 FREIBURG,FED REP GER
FRAUNHOFER INST,INST ANGEW FESTKORPERPHYS,D-7800 FREIBURG,FED REP GER
SCHULZ, M
KLAUSMANN, E
论文数:
0
引用数:
0
h-index:
0
机构:
FRAUNHOFER INST,INST ANGEW FESTKORPERPHYS,D-7800 FREIBURG,FED REP GER
FRAUNHOFER INST,INST ANGEW FESTKORPERPHYS,D-7800 FREIBURG,FED REP GER
KLAUSMANN, E
[J].
APPLIED PHYSICS,
1979,
18
(02):
: 169
-
175
[7]
TREDWELL TJ, UNPUBLISHED
[8]
DETERMINATION OF INTERFACE STATE ENERGY DURING THE CAPTURE OF ELECTRONS AND HOLES USING DLTS
WANG, KL
论文数:
0
引用数:
0
h-index:
0
机构:
General Electric Corporate Research and Development Center, Schenectady
WANG, KL
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1979,
26
(05)
: 819
-
821
[9]
DETERMINATION OF INTERFACE AND BULK-TRAP STATES OF IGFETS USING DEEP-LEVEL TRANSIENT SPECTROSCOPY
WANG, KL
论文数:
0
引用数:
0
h-index:
0
机构:
GE, CORP RES & DEV, SCHENECTADY, NY 12301 USA
GE, CORP RES & DEV, SCHENECTADY, NY 12301 USA
WANG, KL
EVWARAYE, AO
论文数:
0
引用数:
0
h-index:
0
机构:
GE, CORP RES & DEV, SCHENECTADY, NY 12301 USA
GE, CORP RES & DEV, SCHENECTADY, NY 12301 USA
EVWARAYE, AO
[J].
JOURNAL OF APPLIED PHYSICS,
1976,
47
(10)
: 4574
-
4577
[10]
QUENCHED-IN BULK DEFECTS AND INTERFACE STATES IN MOS STRUCTURES MEASURED BY TRANSIENT CAPACITANCE SPECTROSCOPY
WANG, KL
论文数:
0
引用数:
0
h-index:
0
WANG, KL
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1978,
125
(10)
: 1664
-
1667
←
1
→