TRANSIENT CAPACITANCE MEASUREMENTS OF INTERFACE STATES ON THE INTENTIONALLY CONTAMINATED SI-SIO2 INTERFACE

被引：85

作者：

SCHULZ, M ^{[1
]}

KLAUSMANN, E ^{[1
]}

机构：

[1] FRAUNHOFER INST,INST ANGEW FESTKORPERPHYS,D-7800 FREIBURG,FED REP GER

来源：

APPLIED PHYSICS | 1979年 / 18卷 / 02期

关键词：

73.40;

D O I：

10.1007/BF00934412

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The constant capacitance transient capacitance technique (CC-DLTS) was applied to analyse the effect of impurities on MOS interface states. The elements Cs, Pb, Xe were ion implanted prior to oxidation. Sodium was implanted directly into SiO2 and drifted to the interface. The alkali ions cause a steep increase in the density of interface states near the conduction band edge. The other elements studied show little effect on the interface properties. The capture cross-section for electrons decreases strongly near the conduction band. © 1979 Springer-Verlag.

引用

页码：169 / 175

页数：7

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