CESIUM PROFILES IN SILICON AND IN SIO2-SI DOUBLE-LAYERS AS DETERMINED BY SIMS MEASUREMENTS

被引：15

作者：

HURRLE, A ^{[1
]}

SIXT, G ^{[1
]}

机构：

[1] FRAUNHOFER GESELL,INST ANGEW FESTKORPER PHYS,D-7800 FREIBURG,FED REP GER

来源：

APPLIED PHYSICS | 1975年 / 8卷 / 04期

关键词：

D O I：

10.1007/BF00898362

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：293 / 302

页数：10

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