FORMATION OF QUANTUM-WELL WIRE-LIKE STRUCTURES BY MBE GROWTH OF ALGAAS/GAAS SUPERLATTICES ON GAAS (110) SURFACES

被引：27

作者：

HASEGAWA, S

SATO, M

MAEHASHI, K

ASAHI, H

NAKASHIMA, H

机构：

[1] The Institute of Scientific and Industrial Research, Osaka University, Ibaraki, Osaka, 567, Mihogaoka

来源：

JOURNAL OF CRYSTAL GROWTH | 1991年 / 111卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(91)91003-S

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We report on molecular beam epitaxial (MBE) growth of AlGaAs/GaAs superlattices on several GaAs (110) substrates, i.e. nominal (110) substrates and vicinal (110) substrates misoriented toward (111)A and (111)B. MBE growth of the superlattices on vicinal (110) substrates misoriented toward (111)B has been found to produce quantum well wire-like structures being coherently aligned toward the <110> direction with almost equal spacing. We discuss the formation mechanism of the quantum well wire-like structures which is closely related with the MBE growth mechanism on (110) surfaces.

引用

页码：371 / 375

页数：5

共 6 条

[1] CHARACTERIZATION OF SURFACE FACETING ON (110)GAAS/GAAS GROWN BY MOLECULAR-BEAM EPITAXY
ALLEN, LTP
WEBER, ER
WASHBURN, J
PAO, YC
ELLIOT, AG
[J]. JOURNAL OF CRYSTAL GROWTH, 1988, 87 (2-3) : 193 - 200
[2] DEVICE QUALITY GROWTH AND CHARACTERIZATION OF (110) GAAS GROWN BY MOLECULAR-BEAM EPITAXY
ALLEN, LTP
WEBER, ER
WASHBURN, J
PAO, YC
[J]. APPLIED PHYSICS LETTERS, 1987, 51 (09) : 670 - 672
[3] COMPOSITIONAL DISORDERING OF GAAS-ALXGA1-XAS SUPERLATTICE BY GA FOCUSED ION-BEAM IMPLANTATION AND ITS APPLICATION TO SUB-MICRON STRUCTURE FABRICATION
HIRAYAMA, Y
SUZUKI, Y
TARUCHA, S
OKAMOTO, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1985, 24 (07): : L516 - L518
[4] CATHODOLUMINESCENCE MEASUREMENT OF AN ORIENTATION DEPENDENT ALUMINUM CONCENTRATION IN ALXGA1-XAS EPILAYERS GROWN BY MOLECULAR-BEAM EPITAXY ON A NONPLANAR SUBSTRATE
HOENK, ME
CHEN, HZ
YARIV, A
MORKOC, H
VAHALA, KJ
[J]. APPLIED PHYSICS LETTERS, 1989, 54 (14) : 1347 - 1349
[5] STRUCTURE OF ALAS-GAAS INTERFACES GROWN ON (100) VICINAL SURFACES BY MOLECULAR-BEAM EPITAXY
PETROFF, PM
GOSSARD, AC
WIEGMANN, W
[J]. APPLIED PHYSICS LETTERS, 1984, 45 (06) : 620 - 622
[6] SATO M, 1990, IN PRESS 5TH P INT C

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