IDENTIFICATION OF HOLE TRANSITIONS AT THE NEUTRAL INTERSTITIAL MANGANESE CENTER IN SILICON

被引：4

作者：

BEVER, T

EMANUELSSON, P

KLEVERMAN, M

GRIMMEISS, HG

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 24期

关键词：

D O I：

10.1063/1.101975

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2541 / 2543

页数：3

共 11 条

[1] ENERGY-LEVELS OF INTERSTITIAL MANGANESE IN SILICON [J].

CZAPUTA, R ;

FEICHTINGER, H ;

OSWALD, J .

SOLID STATE COMMUNICATIONS, 1983, 47 (04) :223-226

[2] EXPERIMENTAL IDENTIFICATION OF THE ENERGY-LEVEL OF SUBSTITUTIONAL MANGANESE IN SILICON [J].

HAIDER, M ;

SITTER, H ;

CZAPUTA, R ;

FEICHTINGER, H ;

OSWALD, J .

JOURNAL OF APPLIED PHYSICS, 1987, 62 (09) :3785-3790

[3]

KIMMERLING LC, 1981, I PHYSICS C SER, V59, P217

[4]

KLEVERMAN M, 1988, MATER RES SOC S P, V104, P141

[5]

LUDWIG GW, 1962, SOLID STATE PHYS, V13, P223

[6] LINE SPECTRUM OF THE INTERSTITIAL IRON DONOR IN SILICON [J].

OLAJOS, J ;

NIELSEN, BB ;

KLEVERMAN, M ;

OMLING, P ;

EMANUELSSON, P ;

GRIMMEISS, HG .

APPLIED PHYSICS LETTERS, 1988, 53 (25) :2507-2509

[7] HIGH-RESOLUTION SPECTROSCOPY OF SILVER-DOPED SILICON [J].

OLAJOS, J ;

KLEVERMAN, M ;

GRIMMEISS, HG .

PHYSICAL REVIEW B, 1988, 38 (15) :10633-10640

[8] PHOTO-LUMINESCENCE CHARACTERIZATION OF DEEP DEFECTS IN SILICON [J].

SAUER, R ;

WEBER, J .

PHYSICA B & C, 1983, 116 (1-3) :195-209

[9] ACCEPTOR-LIKE EXCITED-STATES OF THE ISOELECTRONIC A,B,C EXCITON SYSTEM IN SILICON [J].

WAGNER, J ;

SAUER, R .

PHYSICAL REVIEW B, 1982, 26 (06) :3502-3505

[10] TRANSITION-METALS IN SILICON [J].

WEBER, ER .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1983, 30 (01) :1-22

← 1 2 →