EXPERIMENTAL IDENTIFICATION OF THE ENERGY-LEVEL OF SUBSTITUTIONAL MANGANESE IN SILICON

被引：8

作者：

HAIDER, M ^{[1
]}

SITTER, H ^{[1
]}

CZAPUTA, R ^{[1
]}

FEICHTINGER, H ^{[1
]}

OSWALD, J ^{[1
]}

机构：

[1] GRAZ UNIV,INST EXPTL PHYS,A-8010 GRAZ,AUSTRIA

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 62卷 / 09期

关键词：

D O I：

10.1063/1.339217

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3785 / 3790

页数：6

共 31 条

[1]

Aissing G., 1986, Materials Science Forum, V10-12, P711, DOI 10.4028/www.scientific.net/MSF.10-12.711

[2] THEORETICAL EVIDENCE FOR LOW-SPIN GROUND-STATES OF EARLY INTERSTITIAL AND LATE SUBSTITUTIONAL 3D TRANSITION-METAL IONS IN SILICON [J].

BEELER, F ;

ANDERSEN, OK ;

SCHEFFLER, M .

PHYSICAL REVIEW LETTERS, 1985, 55 (14) :1498-1501

[3]

BEELER F, 1985, B AM PHYS SOC, V30, P303

[4] PROPERTIES OF SILICON DOPED WITH MANGANESE [J].

CARLSON, RO .

PHYSICAL REVIEW, 1956, 104 (04) :937-941

[5] ENERGY-LEVELS OF INTERSTITIAL MANGANESE IN SILICON [J].

CZAPUTA, R ;

FEICHTINGER, H ;

OSWALD, J .

SOLID STATE COMMUNICATIONS, 1983, 47 (04) :223-226

[6] ENERGY-LEVEL OF THE 0 TO + CHARGE TRANSITION OF SUBSTITUTIONAL MANGANESE IN SILICON [J].

CZAPUTA, R ;

FEICHTINGER, H ;

OSWALD, J ;

SITTER, H ;

HAIDER, M .

PHYSICAL REVIEW LETTERS, 1985, 55 (07) :758-760

[7] LEVEL POSITIONS OF INTERSTITIAL TRANSITION-METAL IMPURITIES IN SILICON [J].

DELEO, GG ;

WATKINS, GD ;

FOWLER, WB .

PHYSICAL REVIEW B, 1982, 25 (08) :4972-4980

[8]

DELERNE C, 1986, DEFECTS SEMICONDUCTO, V10, P37

[9] DEFECT LEVELS IN P-TYPE SILICON DOPED WITH MANGANESE [J].

EVWARAYE, AO .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (09) :3813-3818

[10]

EVWARAYE AO, 1979, I PHYS C SER, V46, P533

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