A SUBMICRON MOSFET PARAMETER EXTRACTION TECHNIQUE

被引：9

作者：

ELKAREH, B ^{[1
]}

TONTI, WR ^{[1
]}

TITCOMB, SL ^{[1
]}

机构：

[1] UNIV VERMONT, DEPT COMP SCI ELECT ENGN, BURLINGTON, VT 05405 USA

来源：

IBM JOURNAL OF RESEARCH AND DEVELOPMENT | 1990年 / 34卷 / 2-3期

关键词：

D O I：

10.1147/rd.342.0243

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

A technique is introduced for measuring electron and hole mobilities as a function of temperature and normal field in inverted silicon surfaces. We also introduce a new definition of threshold voltage which allows the method to measure mobility independent of channel dimensions and resistance in series with the channel. The results are used to extract the resistance in series with the channel, the effective channel dimensions, and the intrinsic MOSFET transconductance. The technique is demonstrated on MOSFETs with channel lengths ranging from 0.25 μm to 20 μm.

引用

页码：243 / 249

页数：7

共 12 条

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