PRODUCTION OF ACCEPTOR CENTERS IN GERMANIUM AND SILICON BY PLASTIC DEFORMATION

被引：23

作者：

ELLIS, WC

GREINER, ES

机构：

来源：

PHYSICAL REVIEW | 1953年 / 92卷 / 04期

关键词：

D O I：

10.1103/PhysRev.92.1061.2

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1061 / 1062

页数：2

共 8 条

[1] EFFECTS OF DISLOCATIONS ON MOBILITIES IN SEMICONDUCTORS
DEXTER, DL
SEITZ, F
[J]. PHYSICAL REVIEW, 1952, 86 (06): : 964 - 965
[2] PLASTIC DEFORMATION OF GERMANIUM AND SILICON
GALLAGHER, CJ
[J]. PHYSICAL REVIEW, 1952, 88 (04): : 721 - 722
[3] GALLAGHER CJ, 1953, B AM PHYSICAL SOC, V28, P10
[4] THE DRIFT MOBILITY OF ELECTRONS IN SILICON
HAYNES, JR
WESTPHAL, WC
[J]. PHYSICAL REVIEW, 1952, 85 (04): : 680 - 680
[5] THE MOBILITY AND LIFE OF INJECTED HOLES AND ELECTRONS IN GERMANIUM
HAYNES, JR
SHOCKLEY, W
[J]. PHYSICAL REVIEW, 1951, 81 (05): : 835 - 843
[6] THE PLASTICITY OF SILICON AND GERMANIUM
SEITZ, F
[J]. PHYSICAL REVIEW, 1952, 88 (04): : 722 - 724
[7] SHOCKLEY W, 1953, PHYS REV, V91, P228
[8] TREUTING R, 1952, J METALS, V4, P1944