ENERGY CONTAMINATION IN ION-IMPLANTATION

被引：2

作者：

VANHERK, J

VANDERSTEEGE, AN

VANMEYL, MLC

ZALM, PC

机构：

[1] PHILIPS COMPONENTS,6534 AE NIJMEGEN,NETHERLANDS

[2] PHILIPS RES LABS,5600 JA EINDHOVEN,NETHERLANDS

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1991年 / 55卷 / 1-4期

关键词：

D O I：

10.1016/0168-583X(91)96129-9

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Extending the effective energy range of an implanter is possible by implanting multiple-charged species. A problem when using these species is energy contamination. The energy contamination using P3+, B2+ and B+ has been investigated on commercially available high-current implanters. The major cause of energy contamination is charge exchange reactions due to (the residual) gas inside an implanter. Careful control and design of the vacuum system are therefore important. Energy contamination can also be caused by sputtering/reflection from slits and lining of the implanter. Ionisation of residual gas is probably the origin of fluorine contamination when using BF3 as source feed material. The fluorine contamination again stresses the need to control the amount and composition of the residual gas in an implanter.

引用

页码：25 / 29

页数：5

共 6 条

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