DEEP IMPLANTS BY CHANNELING IMPLANTATION

被引：28

作者：

SCHREUTELKAMP, RJ

SARIS, FW

WESTENDORP, JFM

KAIM, RE

ODLUM, GB

JANSSEN, KTF

机构：

[1] PHILIPS RES LABS,5600 JA EINDHOVEN,NETHERLANDS

[2] ASM ION IMPLANT,BEVERLY,MA

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1989年 / 2卷 / 1-3期

关键词：

D O I：

10.1016/0921-5107(89)90088-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：139 / 143

页数：5

共 9 条

[1]

BERRIAN DW, ASM220 MED CURR IMPL

[2]

BRICE DK, 1975, ION IMPLANTATION RAN, V1

[3] PLANAR CHANNELING EFFECTS IN SI(100) [J].

CURRENT, MI ;

TURNER, NL ;

SMITH, TC ;

CRANE, D .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1985, 6 (1-2) :336-348

[4] CHANNELED-ION IMPLANTATION OF GROUP-III AND GROUP-V IONS INTO SILICON [J].

FURUYA, T ;

NISHI, H ;

INADA, T ;

SAKURAI, T .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) :3918-3921

[5] CHANNELING OF BORON IONS INTO SILICON [J].

LECROSNIER, D ;

PAUGAM, J ;

GALLOU, J .

APPLIED PHYSICS LETTERS, 1977, 30 (07) :323-325

[6]

NISHI H, 1978, J APPL PHYS, V49, P60

[7] DISTRIBUTIONS OF BORON AND PHOSPHORUS IMPLANTED IN SILICON IN THE ENERGY-RANGE 0.1-1.5 MEV [J].

OOSTERHOFF, S .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1988, 30 (01) :1-12

[8]

WESTENDORP JFM, 1988, 7TH P INT C IMPL TEC

[9]

Ziegler J. F., 1984, STOPPING RANGE IONS, V1

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