MODELING AND CONTROL OF MICROELECTRONICS MATERIALS PROCESSING

被引：39

作者：

BADGWELL, TA ^{[1
]}

BREEDIJK, T ^{[1
]}

BUSHMAN, SG ^{[1
]}

BUTLER, SW ^{[1
]}

CHATTERJEE, S ^{[1
]}

EDGAR, TF ^{[1
]}

TOPRAC, AJ ^{[1
]}

TRACHTENBERG, I ^{[1
]}

机构：

[1] UNIV TEXAS,DEPT CHEM ENGN,AUSTIN,TX 78712

来源：

COMPUTERS & CHEMICAL ENGINEERING | 1995年 / 19卷 / 01期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1016/0098-1354(94)E0038-O

中图分类号：

TP39 [计算机的应用];

学科分类号：

081203 ; 0835 ;

摘要：

Major advances in modeling and control will be required to meet future technical challenges in microelectronics manufacturing. This paper reviews the recent applications of fundamental mathematical modeling to unit operations such as crystal growth, lithography, chemical vapor deposition and plasma etching, where there have been some notable successes. Important characteristics of these processes are identified, and the evolution of the standard multiwafer reactor to single wafer reactors processing larger wafers is discussed. The implementation of closed-loop control on key unit operations in microelectronics manufacturing has been extremely limited due to a lack of suitable on-line measurements. There remains considerable promise for application of modern control and optimization techniques in manufacture of integrated circuits.

引用

页码：1 / 41

页数：41

共 236 条

[1] THE PLASMA-ETCHING OF POLYSILICON WITH CF3CL/ARGON DISCHARGES .2. MODELING OF ION-BOMBARDMENT ENERGY-DISTRIBUTIONS [J].