GRAZING ANGLE OPTICAL-EMISSION INTERFEROMETRY FOR END-POINT DETECTION

被引：9

作者：

ANGELL, D

OEHRLEIN, GS

机构：

[1] IBM Research Division, T.J. Watson Research Center, Yorktown Heights

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 03期

关键词：

D O I：

10.1063/1.104701

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Light emitted from a plasma during reactive ion etching and reflected by the wafer surface at a grazing angle is utilized to determine the remaining film thickness with an accuracy of +/- 30 angstrom. This promises a more flexible etching approach, e.g., tailoring the final stage of etching to minimize lattice damage.

引用

页码：240 / 242

页数：3

共 10 条

[1] BANKS P, 1988, SPIE, V1037, P35
[2] Born M., 1980, PRINCIPLES OPTICS
[3] THICKNESS MEASUREMENT OF SILICON DIOXIDE LAYERS BY ULTRAVIOLET-VISIBLE INTERFERENCE METHOD
CORL, EA
WIMPFHEIMER, H
[J]. SOLID-STATE ELECTRONICS, 1964, 7 (10) : 755 - &
[4] OPTICAL DIAGNOSTICS OF LOW-PRESSURE PLASMAS
DREYFUS, RW
JASINSKI, JM
WALKUP, RE
SELWYN, GS
[J]. PURE AND APPLIED CHEMISTRY, 1985, 57 (09) : 1265 - 1276
[5] HEIMANN PA, 1983, 4TH P S PLASM PROC, P441
[6] NEW AND SIMPLE OPTICAL METHOD FOR INSITU ETCH RATE DETERMINATION AND ENDPOINT DETECTION
HEINRICH, F
STOLL, HP
SCHEER, HC
[J]. APPLIED PHYSICS LETTERS, 1989, 55 (14) : 1474 - 1476
[7] CONTINUOUS OPTICAL MEASUREMENT OF THE DRY ETCHING OF SILICON USING THE DIFFRACTION OF A LAMELLAR GRATING
MENDES, GF
CESCATO, L
FREJLICH, J
BRAGA, ES
MAMMANA, AP
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (01) : 190 - 193
[8] REFRACTIVE-INDEX DISPERSION OF DIELECTRIC FILMS USED IN THE SEMICONDUCTOR INDUSTRY
PLISKIN, WA
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (11) : 2819 - 2826
[9] OPTICAL THICKNESS MEASUREMENT OF SIO2-SI3N4 FILMS ON SILICON
REIZMAN, F
VANGELDE.W
[J]. SOLID-STATE ELECTRONICS, 1967, 10 (07) : 625 - &
[10] Rossi B. B., 1957, OPTICS

← 1 →