NEW AND SIMPLE OPTICAL METHOD FOR INSITU ETCH RATE DETERMINATION AND ENDPOINT DETECTION

[1] Bayer T., 1983, IBM Technical Disclosure Bulletin, V26, P688

[2] Born M., 1980, PRINCIPLES OPTICS, V6th, P109

[3] OPTICAL MONITORING OF THE ENDPOINT IN THIN-FILM PLASMA-ETCHING [J]. THIN SOLID FILMS, 1983, 109 (04) : 363 - 369

[4] BULAT ES, 1982, SEMICOND INT, V5, P115

[5] ELECTRICAL ENDPOINT DETECTION OF VLSI CONTACT PLASMA-ETCHING [J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (12) : 514 - 517

[6] FURTHER IMPROVEMENTS IN END-POINT DETECTION USING A WIDE ANGLE ION-BEAM SOURCE [J]. VACUUM, 1988, 38 (06) : 499 - 502

[7] EINSPRUCH NG, 1984, VLSI ELECTRONICS MIC, V8

[8] HEINRICH F, 1989, IN PRESS VACUUM

[9] MONITORING SECONDARY IONS DURING ION ETCHING [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (03): : 913 - 917

[10] ILIC DB, 1981, REV SCI INSTRUM, V52, P1542, DOI 10.1063/1.1136465

[1] Bayer T., 1983, IBM Technical Disclosure Bulletin, V26, P688

[2] Born M., 1980, PRINCIPLES OPTICS, V6th, P109

[3] OPTICAL MONITORING OF THE ENDPOINT IN THIN-FILM PLASMA-ETCHING [J]. THIN SOLID FILMS, 1983, 109 (04) : 363 - 369

[4] BULAT ES, 1982, SEMICOND INT, V5, P115

[5] ELECTRICAL ENDPOINT DETECTION OF VLSI CONTACT PLASMA-ETCHING [J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (12) : 514 - 517

[6] FURTHER IMPROVEMENTS IN END-POINT DETECTION USING A WIDE ANGLE ION-BEAM SOURCE [J]. VACUUM, 1988, 38 (06) : 499 - 502

[7] EINSPRUCH NG, 1984, VLSI ELECTRONICS MIC, V8

[8] HEINRICH F, 1989, IN PRESS VACUUM

[9] MONITORING SECONDARY IONS DURING ION ETCHING [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (03): : 913 - 917

[10] ILIC DB, 1981, REV SCI INSTRUM, V52, P1542, DOI 10.1063/1.1136465