MONITORING SECONDARY IONS DURING ION ETCHING

被引:8
作者
HOSAKA, S
SAKUDO, N
HASHIMOTO, S
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1979年 / 16卷 / 03期
关键词
D O I
10.1116/1.570112
中图分类号
O59 [应用物理学];
学科分类号
摘要
The feasibility of detecting and monitoring secondary ions emitted from the etched surface during ion etching are investigated. The experimental apparatus is composed of an improved mass filter of the quadrupole type together with a conventional ion beam etching system equipped with a Kaufman-type ion source. Experiments to detect secondary ions, examine impurity contamination, and monitor layer interfaces are carried out. Redeposition of sputtered atoms on the sample surface is clearly observed, and the layer interfaces are monitored.
引用
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页码:913 / 917
页数:5
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