IMPLANTED SOURCE-DRAIN JUNCTIONS FOR POLYSILICON GATE TECHNOLOGIES

被引：5

作者：

GEIPEL, HJ

SHASTEEN, RB

机构：

来源：

IBM JOURNAL OF RESEARCH AND DEVELOPMENT | 1980年 / 24卷 / 03期

关键词：

D O I：

10.1147/rd.243.0362

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

引用

页码：362 / 369

页数：8

共 19 条

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GEIPEL HJ, 1979, IEEE WORKSHOP VSLI N

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GEIPEL HJ, 1976, FAL P EL SOC M LAS V, P814

[9] METAL PRECIPITATES IN SILICON P-N JUNCTIONS [J].

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[10]

Grove A S, 1967, PHYS TECHNOLOGY SEMI

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