ON THE POSSIBILITY OF STRESS-INDUCED SUPERCONDUCTIVITY IN THE MOS INVERSION LAYER SI(100)/SIO2

被引：2

作者：

KELLY, MJ ^{[1
]}

MURAMATSU, A ^{[1
]}

HANKE, W ^{[1
]}

机构：

[1] MAX PLANCK INST FESTKORPERFORSCH,D-7000 STUTTGART 80,FED REP GER

来源：

SURFACE SCIENCE | 1982年 / 113卷 / 1-3期

关键词：

D O I：

10.1016/0039-6028(82)90595-7

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：256 / 259

页数：4

共 12 条

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[6]

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SHAM, LJ ;

NAKAYAMA, M .

PHYSICAL REVIEW B, 1979, 20 (02) :734-747

[8] PROPERTIES OF SEMICONDUCTOR SURFACE INVERSION LAYERS IN ELECTRIC QUANTUM LIMIT [J].

STERN, F ;

HOWARD, WE .

PHYSICAL REVIEW, 1967, 163 (03) :816-&

[9] 1ST-PRINCIPLE CALCULATION OF SUPERCONDUCTING TRANSITION-TEMPERATURE OF MOS INVERSION-LAYERS [J].

TAKADA, Y .

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[10]

1978, SURFACE SCI, V73

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