STRESS AND TEMPERATURE-DEPENDENCE OF ELECTRONIC PROPERTIES OF N-TYPE SILICON INVERSION LAYERS

被引：16

作者：

KELLY, MJ ^{[1
]}

FALICOV, LM ^{[1
]}

机构：

[1] UNIV CAMBRIDGE,CAVENDISH LAB,CAMBRIDGE CB3 0HE,ENGLAND

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1977年 / 10卷 / 23期

关键词：

D O I：

10.1088/0022-3719/10/23/009

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

收藏

页码：4735 / 4752

页数：18

相关论文

共 27 条

[1] SUPERCONDUCTIVITY IN MANY-VALLEY SEMICONDUCTORS + IN SEMIMETALS
COHEN, ML
[J]. PHYSICAL REVIEW, 1964, 134 (2A): : A511 - +
[2] VALLEY DEGENERACY AND MOBILITY ANISOTROPY UNDER MECHANICAL-STRESS ON (111) SILICON INVERSION LAYERS
DORDA, G
GESCH, H
EISELE, I
[J]. SOLID STATE COMMUNICATIONS, 1976, 20 (04) : 429 - 432
[3] PIEZORESISTANCE IN N-TYPE SILICON INVERSION LAYERS AT LOW-TEMPERATURES
DORDA, G
EISELE, I
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1973, 20 (01): : 263 - 273
[4] EVIDENCE FOR MOBILITY DOMAINS IN (100) SILICON INVERSION LAYERS
EISELE, I
GESCH, H
DORDA, G
[J]. SOLID STATE COMMUNICATIONS, 1976, 20 (07) : 677 - 680
[5] SURFACE QUANTUM OSCILLATIONS IN (100) INVERSION LAYERS UNDER UNIAXIAL STRESS
EISELE, I
GESCH, H
DORDA, G
[J]. SOLID STATE COMMUNICATIONS, 1976, 18 (06) : 743 - 746
[6] EFFECTIVE MASSES IN (100) SILICON INVERSION LAYERS
EISELE, I
GESCH, H
DORDA, G
[J]. SOLID STATE COMMUNICATIONS, 1977, 22 (03) : 185 - 188
[7] ENGLERT T, UNPUBLISHED
[8] ITINERANT ANTIFERROMAGNETISM
FEDDERS, PA
MARTIN, PC
[J]. PHYSICAL REVIEW, 1966, 143 (01): : 245 - &
[9] ELECTRONIC GROUND-STATE OF INVERSION LAYERS IN MANY-VALLEY SEMICONDUCTORS
KELLY, MJ
FALICOV, LM
[J]. PHYSICAL REVIEW B, 1977, 15 (04): : 1974 - 1982
[10] OPTICAL-PROPERTIES OF CHARGE-DENSITY-WAVE GROUND-STATES FOR INVERSION LAYERS IN MANY-VALLEY SEMICONDUCTORS
KELLY, MJ
FALICOV, LM
[J]. PHYSICAL REVIEW B, 1977, 15 (04): : 1983 - 1987