COMPARISON OF EXPERIMENTAL AND COMPUTED RESULTS ON ARSENIC-DOPED AND PHOSPHORUS-DOPED POLYSILICON EMITTER BIPOLAR-TRANSISTORS

被引：31

作者：

ASHBURN, P ^{[1
]}

ROULSTON, DJ ^{[1
]}

SELVAKUMAR, CR ^{[1
]}

机构：

[1] UNIV WATERLOO,DEPT ELECT ENGN,WATERLOO N2L 3G1,ONTARIO,CANADA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1987年 / 34卷 / 06期

关键词：

D O I：

10.1109/T-ED.1987.23090

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1346 / 1353

页数：8

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