VARIATIONS IN THE STOICHIOMETRY OF THIN OXIDES ON SILICON AS SEEN IN THE SI LVV AUGER SPECTRUM

被引：13

作者：

WILDMAN, HS

BARTHOLOMEW, RF

PLISKIN, WA

REVITZ, M

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1981年 / 18卷 / 03期

关键词：

D O I：

10.1116/1.570963

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：955 / 959

页数：5

共 18 条

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[8] OBSERVATION OF CHANGES IN THE ELECTRONIC DENSITY OF STATES AT A SI (111) SURFACE DURING ADSORPTION OF OXYGEN BY AUGER-ELECTRON SPECTROSCOPY [J].

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[9] THICKNESS MEASUREMENT OF A THIN OXIDE LAYER BY SECONDARY-ELECTRON EMISSION [J].

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[10]

PAN P, UNPUBLISHED

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