LIMITATIONS OF TISI2 AS A SOURCE FOR DOPANT DIFFUSION

被引：54

作者：

PROBST, V ^{[1
]}

SCHABER, H ^{[1
]}

LIPPENS, P ^{[1
]}

VANDENHOVE, L ^{[1
]}

DEKEERSMAECKER, R ^{[1
]}

机构：

[1] IMEC VZW,INTERUNIV MICROELECTR CTR,B-3030 LEUVEN,BELGIUM

来源：

APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 21期

关键词：

D O I：

10.1063/1.99723

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1803 / 1805

页数：3

共 9 条

[1] DEVELOPMENT OF THE SELF-ALIGNED TITANIUM SILICIDE PROCESS FOR VLSI APPLICATIONS [J].

ALPERIN, ME ;

HOLLAWAY, TC ;

HAKEN, RA ;

GOSMEYER, CD ;

KARNAUGH, RV ;

PARMANTIE, WD .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (02) :141-149

[2] BORON, PHOSPHORUS, AND ARSENIC DIFFUSION IN TISI2 [J].

GAS, P ;

DELINE, V ;

DHEURLE, FM ;

MICHEL, A ;

SCILLA, G .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (05) :1634-1639

[3]

LIU R, 1987, 1ST P INT S ULSI SCI, P446

[4]

PROBST V, 1987, 17TH P ESSDERC, P437

[5]

PROBST V, 1986, 5TH P INT S SIL MAT

[6]

PROCTOR SJ, 1982, IEEE ELECTRON DEVICE, V3, P294

[7] MORPHOLOGICAL DEGRADATION OF TISI2 ON (100)SILICON [J].

REVESZ, P ;

ZHENG, LR ;

HUNG, LS ;

MAYER, JW .

APPLIED PHYSICS LETTERS, 1986, 48 (23) :1591-1593

[8] ANALYSIS OF POLYCRYSTALLINE SILICON DIFFUSION SOURCES BY SECONDARY ION MASS-SPECTROMETRY [J].

SCHABER, H ;

VONCRIEGERN, R ;

WEITZEL, I .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (11) :4036-4042

[9]

VANDENHOVE L, 1985, 15TH P EUR SOL STAT, P281

← 1 →