THEORETICAL-STUDIES OF THE RECONSTRUCTION OF THE (110) SURFACE OF III-V AND II-VI SEMICONDUCTOR COMPOUNDS

被引：45

作者：

SWARTS, CA ^{[1
]}

GODDARD, WA ^{[1
]}

MCGILL, TC ^{[1
]}

机构：

[1] CALTECH,HARRY G STEELE LAB APPL PHYS & ELECT ENGN,PASADENA,CA 91125

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1980年 / 17卷 / 05期

关键词：

D O I：

10.1116/1.570652

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：982 / 986

页数：5

共 17 条

[1] RECONSTRUCTION AND OXIDATION OF THE GAAS(110) SURFACE [J].

BARTON, JJ ;

GODDARD, WA ;

MCGILL, TC .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05) :1178-1185

[2]

BARTON JJ, 1979, THESIS CALIFORNIA I

[3]

BOBROWICZ FW, 1977, MODERN THEORETICAL C, V3, P79

[4] THEORETICAL STUDIES OF SI AND GAAS SURFACES AND INITIAL STEPS IN OXIDATION [J].

GODDARD, WA ;

BARTON, JJ ;

REDONDO, A ;

MCGILL, TC .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04) :1274-1286

[5] STUDY OF SURFACES AND INTERFACES USING QUANTUM-CHEMISTRY TECHNIQUES [J].

GODDARD, WA ;

MCGILL, TC .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05) :1308-1317

[6] DESCRIPTION OF CHEMICAL BONDING FROM ABINITIO CALCULATIONS [J].

GODDARD, WA ;

HARDING, LB .

ANNUAL REVIEW OF PHYSICAL CHEMISTRY, 1978, 29 :363-396

[7]

HELLWEGE KH, 1976, LANDOLTBORNSTEIN, V7

[8] SURFACE AND NEAR-SURFACE ATOMIC-STRUCTURE OF GAAS (110) [J].

KAHN, A ;

SO, E ;

MARK, P ;

DUKE, CB ;

MEYER, RJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04) :1223-1228

[9] SEMICONDUCTOR SURFACE RECONSTRUCTION - RIPPLED GEOMETRY OF GAAS(110) [J].

LUBINSKY, AR ;

DUKE, CB ;

LEE, BW ;

MARK, P .

PHYSICAL REVIEW LETTERS, 1976, 36 (17) :1058-1061

[10] AB-INITIO EFFECTIVE POTENTIALS FOR USE IN MOLECULAR QUANTUM-MECHANICS [J].

MELIUS, CF ;

GODDARD, WA .

PHYSICAL REVIEW A, 1974, 10 (05) :1528-1540

← 1 2 →