THEORETICAL-STUDIES OF THE RECONSTRUCTION OF THE (110) SURFACE OF III-V AND II-VI SEMICONDUCTOR COMPOUNDS

被引：45

作者：

SWARTS, CA ^{[1
]}

GODDARD, WA ^{[1
]}

MCGILL, TC ^{[1
]}

机构：

[1] CALTECH,HARRY G STEELE LAB APPL PHYS & ELECT ENGN,PASADENA,CA 91125

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1980年 / 17卷 / 05期

关键词：

D O I：

10.1116/1.570652

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：982 / 986

页数：5

共 17 条

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MILLER, DJ ;

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[13] WAVE-FUNCTIONS AND (110) SURFACE-STRUCTURE OF III-V-COMPOUNDS [J].

MILLER, DJ ;

HANEMAN, D .

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[14]

RAPPE AK, UNPUBLISHED

[15] RELAXATION OF SILICON(III) SURFACE ATOMS FROM STUDIES OF SI4H9 CLUSTERS [J].

REDONDO, A ;

GODDARD, WA ;

MCGILL, TC ;

SURRATT, GT .

SOLID STATE COMMUNICATIONS, 1977, 21 (11) :991-994

[16] SURFACE BOND ANGLE AND BOND LENGTHS OF REARRANGED AS AND GA ATOMS ON GAAS(110) [J].

TONG, SY ;

LUBINSKY, AR ;

MRSTIK, BJ ;

VANHOVE, MA .

PHYSICAL REVIEW B, 1978, 17 (08) :3303-3309

[17] ORBITAL OPTIMIZATION IN ELECTRONIC WAVE-FUNCTIONS - EQUATIONS FOR QUADRATIC AND CUBIC CONVERGENCE OF GENERAL MULTICONFIGURATION WAVE-FUNCTIONS [J].

YAFFE, LG ;

GODDARD, WA .

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