THE EFFECT OF VARIOUS BUFFER-LAYER STRUCTURES ON THE MATERIAL QUALITY AND DISLOCATION DENSITY OF HIGH COMPOSITION ALXGA1-XAS LASER MATERIAL GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：1

作者：

GIVENS, ME ^{[1
]}

COLEMAN, JJ ^{[1
]}

ZMUDZINSKI, CA ^{[1
]}

BRYAN, RP ^{[1
]}

EMANUEL, MA ^{[1
]}

MILLER, LM ^{[1
]}

机构：

[1] UNIV ILLINOIS,DEPT ELECT & COMP ENGN,URBANA,IL 61801

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 63卷 / 10期

关键词：

D O I：

10.1063/1.340409

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5092 / 5097

页数：6

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