FACE DEPENDENCE OF EMISSION OF ELECTRONS FROM GAAS ACTIVATED TO NEGATIVE ELECTRON-AFFINITY

被引：13

作者：

BURT, MG ^{[1
]}

INKSON, JC ^{[1
]}

机构：

[1] UNIV CAMBRIDGE,DEPT PHYS,CAVENDISH LAB,CAMBRIDGE CB3 0HE,ENGLAND

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1977年 / 10卷 / 05期

关键词：

D O I：

10.1088/0022-3727/10/5/013

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：721 / 727

页数：7

共 9 条

[1] STUDY OF EMISSION FROM (1,1,1) FACES OF GAAS NEGATIVE ELECTRON AFFINITY PHOTOEMITTERS [J].

BURT, MG ;

INKSON, JC .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1976, 9 (01) :43-53

[2] EMISSION FROM (1,1,0) FACE OF NEGATIVE-ELECTRON AFFINITY GALLIUM-ARSENIDE [J].

BURT, MG ;

INKSON, JC .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1976, 9 (01) :L5-L7

[3] EMISSION OF X ELECTRONS FROM (110) GAAS ACTIVATED TO NEGATIVE ELECTRON AFFINITY [J].

BURT, MG ;

INKSON, JC .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1975, 8 (01) :L3-L5

[4]

BURT MG, TO BE PUBLISHED

[5] INTERPRETATION OF SURFACE BOUNDARY-CONDITIONS IN DIFFUSION-MODEL FOR NEA PHOTOEMISSION [J].

CLARK, MG .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1976, 9 (14) :2139-2153

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BERGSTRESSER, TK .

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[7] ON GENERAL THEORY OF SURFACE STATES AND SCATTERING OF ELECTRONS IN SOLIDS [J].

HEINE, V .

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1963, 81 (520) :300-&

[8] ELECTRONIC BAND STRUCTURE AND COVALENCY IN DIAMOND-TYPE SEMICONDUCTORS [J].

HEINE, V ;

JONES, RO .

JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1969, 2 (04) :719-&

[9] DEPENDENCE ON CRYSTALLINE FACE OF BAND BENDING IN CS2 O-ACTIVATED GAAS [J].

JAMES, LW ;

ANTYPAS, GA ;

EDGECUMBE, J ;

MOON, RL ;

BELL, RL .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (12) :4976-+

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