TRANSPORT-PROPERTIES OF GAAS-ALXGA1-XAS HETEROJUNCTION FIELD-EFFECT TRANSISTORS

被引：38

作者：

TSUI, DC

GOSSARD, AC

KAMINSKY, G

WIEGMANN, W

机构：

来源：

APPLIED PHYSICS LETTERS | 1981年 / 39卷 / 09期

关键词：

D O I：

10.1063/1.92858

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：712 / 714

页数：3

共 13 条

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[5]

Judaprawira S., 1981, IEEE Electron Device Letters, VEDL-2, P14, DOI 10.1109/EDL.1981.25322

[6] A NEW FIELD-EFFECT TRANSISTOR WITH SELECTIVELY DOPED GAAS-N-ALXGA1-XAS HETEROJUNCTIONS [J].

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NANBU, K .

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[7] ELECTRONIC-PROPERTIES OF A HEAVILY-DOPED N-TYPE GAAS-GA1-XALXAS SUPER-LATTICE [J].

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[8] GALVANOMAGNETIC STUDY OF TWO-DIMENSIONAL ELECTRON-GAS IN ALXGA1-XAS-GAAS HETEROJUNCTION FET [J].

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[9]

PRICE PJ, UNPUBLISHED

[10] INFLUENCE OF AN UNDOPED (ALGA)AS SPACER ON MOBILITY ENHANCEMENT IN GAAS-(ALGA)AS SUPER-LATTICES [J].

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APPLIED PHYSICS LETTERS, 1981, 38 (09) :691-693

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