TOPOGRAPHY OF THE AR+-SPUTTERED SI SURFACE

被引：13

作者：

CHINI, TK

BHATTACHARYYA, SR

GHOSE, D

BASU, D

机构：

[1] Saha Institute of Nuclear Physics, Calcutta, 700 064, Sector-1, Block-‘AF’, Bidhan Nagar

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1991年 / 30卷 / 11A期

关键词：

SI; AR+ ION; SPUTTERING; TERRACED STRUCTURE; CONE;

D O I：

10.1143/JJAP.30.2895

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The topography of Si surfaces after 30 keV Ar+ bombardment at oblique incidence is studied with and without seeding of high-melting-point W atoms. In both cases, the sputtered Si surfaces exhibit intense corrugated terrace morphology, the dimension of which increases with increasing ion dose. Also, a few cones characteristics for oblique ion incidence are formed and the seed material seems to have no influence on their development.

引用

页码：2895 / 2896

页数：2

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