SECONDARY ION YIELD CHANGES IN SI AND GAAS DUE TO TOPOGRAPHY CHANGES DURING O-2+ OR CS+ ION-BOMBARDMENT

被引：171

作者：

STEVIE, FA ^{[1
]}

KAHORA, PM ^{[1
]}

SIMONS, DS ^{[1
]}

CHI, P ^{[1
]}

机构：

[1] NBS,GAITHERSBURG,MD 20899

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1988年 / 6卷 / 01期

关键词：

D O I：

10.1116/1.574972

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：76 / 80

页数：5

共 22 条

[1] SIMS ANALYSIS OF ALXGA1-XAS GAAS LAYERED STRUCTURES GROWN BY METAL ORGANIC VAPOR-PHASE EPITAXY [J].

BOUDEWIJN, PR ;

LEYS, MR ;

ROOZEBOOM, F .

SURFACE AND INTERFACE ANALYSIS, 1986, 9 (1-6) :303-308

[2] ION-BOMBARDMENT INDUCED CHANGES IN THE SURFACE-TOPOGRAPHY OF MBE-GROWN SILICON ON GALLIUM-PHOSPHIDE [J].

BOUDEWIJN, PR ;

AKERBOOM, HWP ;

BULLELIEUWMA, CWT ;

HAISMA, J .

SURFACE AND INTERFACE ANALYSIS, 1985, 7 (01) :49-52

[3]

BOUDEWIJN PR, 1986, SPRINGER SER CHEM PH, V44, P270

[4] CHARACTERIZATION AND REMOVAL OF ION YIELD TRANSIENTS IN THE NEAR-SURFACE REGION OF SECONDARY ION MASS-SPECTROMETRY DEPTH PROFILES [J].

BRYAN, SR ;

LINTON, RW ;

GRIFFIS, DP .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (01) :9-14

[5] SOME PROBLEMS AND PROSPECTS IN HIGH EROSION YIELD SPUTTERING [J].

CARTER, G .

VACUUM, 1984, 34 (10-1) :819-824

[6] ION-BOMBARDMENT INDUCED RIPPLE TOPOGRAPHY ON AMORPHOUS SOLIDS [J].

CARTER, G ;

NOBES, MJ ;

PATON, F ;

WILLIAMS, JS ;

WHITTON, JL .

RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1977, 33 (02) :65-73

[7] SURFACE-TOPOGRAPHY OF ELECTRONIC MATERIALS FOLLOWING OXYGEN AND CESIUM ION-BOMBARDMENT [J].

DUNCAN, S ;

SMITH, R ;

SYKES, DE ;

WALLS, JM .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (02) :621-622

[8] SURFACE-MORPHOLOGY OF SI(100), GAAS(100) AND INP(100) FOLLOWING O-2+ AND CS+ ION-BOMBARDMENT [J].

DUNCAN, S ;

SMITH, R ;

SYKES, DE ;

WALLS, JM .

VACUUM, 1984, 34 (1-2) :145-151

[9]

GAVRILOVIC J, 1986, SPRINGER SERIES CHEM, V44, P360

[10] QUANTITATIVE-ANALYSIS OF OXYGEN IN THIN EPITAXIAL LAYERS OF GAAS BY SIMS [J].

HUBER, AM ;

MORILLOT, G ;

LINH, NT ;

DEBRUN, JL ;

VALLADON, M .

NUCLEAR INSTRUMENTS & METHODS, 1978, 149 (1-3) :543-546

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