THE EFFECT OF ION SPECIES ON BOMBARDMENT INDUCED TOPOGRAPHY DURING ION ETCHING OF SILICON

被引：8

作者：

CARTER, G ^{[1
]}

LEWIS, GW ^{[1
]}

NOBES, MJ ^{[1
]}

COX, J ^{[1
]}

BEGEMANN, W ^{[1
]}

机构：

[1] UNIV SALFORD,THIN FILM & SURFACE RES CTR,SALFORD M5 4WT,LANCS,ENGLAND

来源：

VACUUM | 1984年 / 34卷 / 3-4期

关键词：

D O I：

10.1016/0042-207X(84)90081-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：445 / 450

页数：6

共 9 条

[1]

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NOBES, MJ ;

LEWIS, GW ;

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[3]

CARTER G, 1980, P S SPUTTERING, P604

[4] THE DEVELOPMENT OF TAILED-CONES ON NON NORMAL INCIDENCE ION BOMBARDED SOLIDS [J].

LEWIS, GW ;

CARTER, G ;

NOBES, MJ ;

CRUZ, SA .

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[5] ION-BOMBARDMENT INDUCED SURFACE-TOPOGRAPHY MODIFICATION OF CLEAN AND CONTAMINATED SINGLE-CRYSTAL CU AND SI [J].

LEWIS, GW ;

KIRIAKIDES, G ;

CARTER, G ;

NOBES, MJ .

SURFACE AND INTERFACE ANALYSIS, 1982, 4 (04) :141-150

[6] DYNAMIC STUDY OF ION ETCHING IN A HIGH-RESOLUTION SEM [J].

LEWIS, GW ;

COLLIGON, JS ;

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JOURNAL OF MATERIALS SCIENCE, 1980, 15 (03) :681-684

[7]

LEWIS GW, 1971, RAD EFFECTS LETT, V43, P49

[8]

NOBES MJ, 1980, NUCL INSTRUM METHODS, V170, P363

[9]

SIGMUND P, 1981, TOPICS APPLIED PHY 1, V47

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