CONDUCTANCE-NOISE POWER FLUCTUATIONS IN HYDROGENATED AMORPHOUS-SILICON

被引：44

作者：

PARMAN, CE

ISRAELOFF, NE

KAKALIOS, J

机构：

[1] School of Physics and Astronomy, University of Minnesota, Minneapolis

来源：

PHYSICAL REVIEW LETTERS | 1992年 / 69卷 / 07期

关键词：

D O I：

10.1103/PhysRevLett.69.1097

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The power spectra of the 1/f noise in n-type-doped hydrogenated amorphous silicon (a-Si:H) are themselves time dependent. The noise power changes both in magnitude and as a function of frequency, reflecting a modulation of the properties of the fluctuators responsible for the current noise. Slow variations of the noise are strongly correlated over a broad range of frequencies. Spectral analysis of these noise power fluctuations, termed second spectra, also shows an approximate 1/f spectral slope, that is, the 1/f noise has 1/f noise. These results indicate that highly cooperative interactions exist between the fluctuators.

引用

页码：1097 / 1100

页数：4

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