PHASE-STRUCTURE CHARACTERISTICS OF RF REACTIVELY SPUTTERED ZIRCONIA THIN-FILM

被引：11

作者：

WANG, YH

LI, XP

机构：

[1] Department of Materials Science and Engineering, Tsinghua University, Beijing

来源：

THIN SOLID FILMS | 1994年 / 250卷 / 1-2期

关键词：

Oxygen - Pressure - Sputter deposition - Structure (composition) - Substrates - Temperature - Transmission electron microscopy - X ray analysis - Zirconia - Zirconium;

D O I：

10.1016/0040-6090(94)90176-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Zirconia thin films were deposited by an r.f. magnetron reactive sputtering method. Three kinds of target (pure Zr metal and compounds of Y-ZrO2 and Mg-ZrO2) were employed. The phase characteristics of the three series of films deposited with various oxygen partial pressures and substrate temperatures were investigated. It is found that only monoclonic phase was formed in the sputtered thin films when using Zr target, and both tetragonal and monoclinic phases were formed when using the compound targets.

引用

页码：132 / 134

页数：3

共 11 条

[1]

CHAPMAN B, 1980, GLOW DISCHARGE PROCE, P241

[2]

Claussen N., 1984, ADV CERAM, V12, P325

[3] QUANTITATIVE XRD ANALYSIS OF ZIRCONIA-TOUGHENED ALUMINA CERAMICS [J].