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CHEMISORPTION SITE GEOMETRY AND INTERFACE ELECTRONIC-STRUCTURE OF GA AND AL ON GAAS(110)
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AN ELLIPSOIDAL MIRROR DISPLAY ANALYZER SYSTEM FOR ELECTRON-ENERGY AND ANGULAR MEASUREMENTS
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TRANSITION-METALS ON GAAS(110) - A CASE FOR EXTRINSIC SURFACE-STATES
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JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1986, 4 (04)
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THE ROLE OF INTERFACE STATES ON SCHOTTKY BEHAVIOR
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JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS,
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SCREENING AND DELOCALIZATION EFFECTS IN SCHOTTKY-BARRIER FORMATION
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JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
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METAL-DERIVED BAND-GAP STATES - TI ON GAAS(110)
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JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS,
1986, 4 (03)
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ELECTRONIC-PROPERTIES AND CHEMISTRY OF TI/GAAS AND PD/GAAS INTERFACES
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PHYSICAL REVIEW B,
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