ON THE EFFECTS OF GA IN THE FORMATION OF REACTIVE INTERFACES

被引:8
作者
TALEBIBRAHIMI, A
JEZEQUEL, G
LUDEKE, R
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 04期
关键词
D O I
10.1116/1.584234
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:1427 / 1431
页数:5
相关论文
共 16 条
[1]   METAL-SEMICONDUCTOR SURFACE AND INTERFACE STATES ON (110) GAAS [J].
BACHRACH, RZ .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04) :1340-1343
[2]   ELECTRONIC-PROPERTIES OF GA/GAAS(110) UPON INTERFACE FORMATION [J].
BOLMONT, D ;
CHEN, P ;
SEBENNE, CA .
SURFACE SCIENCE, 1982, 117 (1-3) :417-425
[3]   THE STRUCTURE AND PROPERTIES OF METAL-SEMICONDUCTOR INTERFACES [J].
Brillson, L. J. .
SURFACE SCIENCE REPORTS, 1982, 2 (02) :123-326
[4]   CHEMISORPTION SITE GEOMETRY AND INTERFACE ELECTRONIC-STRUCTURE OF GA AND AL ON GAAS(110) [J].
CHADI, DJ ;
BACHRACH, RZ .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05) :1159-1163
[5]   AN ELLIPSOIDAL MIRROR DISPLAY ANALYZER SYSTEM FOR ELECTRON-ENERGY AND ANGULAR MEASUREMENTS [J].
EASTMAN, DE ;
DONELON, JJ ;
HIEN, NC ;
HIMPSEL, FJ .
NUCLEAR INSTRUMENTS & METHODS, 1980, 172 (1-2) :327-336
[6]   TRANSITION-METALS ON GAAS(110) - A CASE FOR EXTRINSIC SURFACE-STATES [J].
HUGHES, G ;
LUDEKE, R ;
SCHAFFLER, F ;
RIEGER, D .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (04) :924-930
[7]   THE ROLE OF INTERFACE STATES ON SCHOTTKY BEHAVIOR [J].
JEZEQUEL, G ;
TALEBIBRAHIMI, A ;
LUDEKE, R ;
SCHAFFLER, F .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1988, 6 (03) :1561-1562
[8]   SCREENING AND DELOCALIZATION EFFECTS IN SCHOTTKY-BARRIER FORMATION [J].
LUDEKE, R ;
JEZEQUEL, G ;
TALEBIBRAHIMI, A .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (04) :1277-1284
[9]   METAL-DERIVED BAND-GAP STATES - TI ON GAAS(110) [J].
LUDEKE, R ;
STRAUB, D ;
HIMPSEL, FJ ;
LANDGREN, G .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (03) :874-878
[10]   ELECTRONIC-PROPERTIES AND CHEMISTRY OF TI/GAAS AND PD/GAAS INTERFACES [J].
LUDEKE, R ;
LANDGREN, G .
PHYSICAL REVIEW B, 1986, 33 (08) :5526-5535