ELECTRICAL ACTIVATION OF BORON-IMPLANTED SILICON DURING RAPID THERMAL ANNEALING

被引：20

作者：

LANDI, E ^{[1
]}

ARMIGLIATO, A ^{[1
]}

SOLMI, S ^{[1
]}

KOGLER, R ^{[1
]}

WIESER, E ^{[1
]}

机构：

[1] ACAD SCI GDR,ZENT INST KERNFORSCH ROSSENDORF,DDR-8051 DRESDEN,GER DEM REP

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1988年 / 47卷 / 04期

关键词：

D O I：

10.1007/BF00615499

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：359 / 366

页数：8

共 19 条

[1] COMPARISON OF BORON DIFFUSIVITY DURING RAPID THERMAL ANNEALING IN PREDAMAGED, PREAMORPHIZED AND CRYSTALLINE SILICON [J].

ARMIGLIATO, A ;

GUIMARAES, S ;

SOLMI, S ;

KOGLER, R ;

WIESER, E .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 19-20 :512-515

[2]

ARMIGLIATO A, 1977, SEMICONDUCTOR SILICO, P638

[3]

Christian JW, 1975, THEORY TRANSFORMATIO

[4]

COWERN NEB, 1986, MATER RES SOC S P, V52, P65

[5]

CZEPREGI L, 1976, APPL PHYS LETT, V29, P645

[6]

FAIR RB, 1985, P MATER RES SOC, V35, P381

[7] STUDIES ON THE LATTICE POSITION OF BORON IN SILICON [J].

FINK, D ;

BIERSACK, JP ;

CARSTANJEN, HD ;

JAHNEL, F ;

MULLER, K ;

RYSSEL, H ;

OSEI, A .

RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1983, 77 (1-2) :11-33

[8] LATTICE LOCATION AND ATOMIC MOBILITY OF IMPLANTED BORON IN SILICON [J].

FRANK, WFJ ;

BERRY, BS .

RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1974, 21 (02) :105-111

[9] ANOMALOUS ENHANCED DIFFUSION AND ELECTRICAL ACTIVATION OF BORON IN SILICON AFTER RAPID ISOTHERMAL ANNEALING [J].

GUIMARAES, S ;

KOGLER, R ;

LANDI, E ;

SOLMI, S ;

WIESER, E .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1986, 93 (02) :549-557

[10] THEORY OF DIFFUSION-LIMITED PRECIPITATION [J].

HAM, FS .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1958, 6 (04) :335-351

← 1 2 →