FULLY ION-IMPLANTED P+-N GERMANIUM AVALANCHE PHOTO-DIODES

被引：21

作者：

KAGAWA, S ^{[1
]}

KANEDA, T ^{[1
]}

MIKAWA, T ^{[1
]}

BANBA, Y ^{[1
]}

TOYAMA, Y ^{[1
]}

MIKAMI, O ^{[1
]}

机构：

[1] NIPPON TELEGRAPH & TEL PUBL CORP,MUSASHINO ELECT COMMUN LAB,MUSASHINO,TOKYO 180,JAPAN

来源：

关键词：

D O I：

10.1063/1.92385

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：429 / 431

页数：3

共 9 条

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[2] Grove A S, 1967, PHYS TECHNOL S, P103
[3] AN N+-N-P GERMANIUM AVALANCHE PHOTO-DIODE
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MIKAWA, T
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ANDO, H
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[4] SHALLOW-JUNCTION P+-N GERMANIUM AVALANCHE PHOTO-DIODES (APDS)
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ANDO, H
[J]. APPLIED PHYSICS LETTERS, 1979, 34 (12) : 866 - 868
[5] LOGAN RA, 1966, J PHYS SOC JPN, VS 21, P434
[6] IMPROVED GERMANIUM AVALANCHE PHOTO-DIODES
MIKAMI, O
ANDO, H
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TOYAMA, Y
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1980, 16 (09) : 1002 - 1007
[7] CRYSTAL ORIENTATION DEPENDENCE OF IONIZATION RATES IN GERMANIUM
MIKAWA, T
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KANEDA, T
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MIKAMI, O
[J]. APPLIED PHYSICS LETTERS, 1980, 37 (04) : 387 - 389
[8] MIKAWA T, 1980, FUJITSU SCI TECH J, V16, P95
[9] AVALANCHE BREAKDOWN IN GERMANIUM
MILLER, SL
[J]. PHYSICAL REVIEW, 1955, 99 (04): : 1234 - 1241