GATE CURRENT OF MODULATION-DOPED FIELD-EFFECT TRANSISTORS

被引：10

作者：

RUDEN, PP ^{[1
]}

HAN, CJ ^{[1
]}

SHUR, M ^{[1
]}

机构：

[1] UNIV MINNESOTA,DEPT ELECT ENGN,MINNEAPOLIS,MN 55455

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 64卷 / 03期

关键词：

D O I：

10.1063/1.341830

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1541 / 1546

页数：6

共 12 条

[1]

BAEK JH, 1986, IEEE ELECTR DEVICE L, V7, P519, DOI 10.1109/EDL.1986.26458

[2] COMPREHENSIVE ANALYSIS OF SI-DOPED ALXGA1-XAS (X=0 TO 1) - THEORY AND EXPERIMENTS [J].

CHAND, N ;

HENDERSON, T ;

KLEM, J ;

MASSELINK, WT ;

FISCHER, R ;

CHANG, YC ;

MORKOC, H .

PHYSICAL REVIEW B, 1984, 30 (08) :4481-4492

[3] REALIZATION OF N-CHANNEL AND P-CHANNEL HIGH-MOBILITY (AL,GA)AS/GAAS HETEROSTRUCTURE INSULATING GATE FETS ON A PLANAR WAFER SURFACE [J].

CIRILLO, NC ;

SHUR, MS ;

VOLD, PJ ;

ABROKWAH, JK ;

TUFTE, ON .

IEEE ELECTRON DEVICE LETTERS, 1985, 6 (12) :645-647

[4] EFFECTS OF DX CENTER AND SPATIAL-DISTRIBUTION OF ELECTRONS ON THE DENSITY OF TWO-DIMENSIONAL ELECTRON-GAS IN MODULATION-DOPED ALGAAS/GAAS HETEROJUNCTION STRUCTURE [J].

LEE, DH ;

LI, SS .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (10) :3789-3791

[5] ELECTRON-DENSITY OF THE TWO-DIMENSIONAL ELECTRON-GAS IN MODULATION DOPED LAYERS [J].

LEE, K ;

SHUR, M ;

DRUMMOND, TJ ;

MORKOC, H .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (04) :2093-2096

[6] EXPERIMENTAL STUDY OF GOLD-GALLIUM ARSENIDE SCHOTTKY BARRIERS [J].

PADOVANI, FA ;

SUMNER, GG .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) :3744-&

[7] QUASI-FERMI LEVEL BENDING IN MODFETS AND ITS EFFECT ON FET TRANSFER CHARACTERISTICS [J].

PONSE, F ;

MASSELINK, WT ;

MORKOC, H .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (06) :1017-1023

[8]

RUDEN P, UNPUB

[9] MODULATION-DOPED GAAS/ALGAAS HETEROJUNCTION FIELD-EFFECT TRANSISTORS (MODFETS), ULTRAHIGH-SPEED DEVICE FOR SUPERCOMPUTERS [J].

SOLOMON, PM ;

MORKOC, H .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (08) :1015-1027

[10] ELECTRON-ENERGY LEVELS IN GAAS-GA1-XALXAS HETEROJUNCTIONS [J].

STERN, F ;

DASSARMA, S .

PHYSICAL REVIEW B, 1984, 30 (02) :840-848

← 1 2 →