METAL-INTRINSIC SEMICONDUCTOR-SEMICONDUCTOR STRUCTURES USING POLYCRYSTALLINE DIAMOND FILMS

被引：28

作者：

MIYATA, K ^{[1
]}

DREIFUS, DL ^{[1
]}

KOBASHI, K ^{[1
]}

机构：

[1] KOBE STEEL LTD, ELECTR RES LAB, NISHI KU, KOBE 65122, JAPAN

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 04期

关键词：

D O I：

10.1063/1.106642

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The electrical characteristics of a metal-intrinsic semiconductor-semiconductor structure formed by Al-undoped polycrystalline diamond-B-doped polycrystalline diamond were investigated. Boron-doped diamond films containing B-to-C ratios of 400 and 4000 ppm in gas phase were deposited on (111)-oriented B-doped Si substrates. Subsequently, undoped diamond layers were deposited on the B-doped diamond films for 60 min. The existence of a bilayer structure in terms of the atomic B concentration was confirmed by a secondary-ion mass spectroscopy. Significant improvements in the rectifying characteristics could be obtained with the introduction of an undoped diamond layer.

引用

页码：480 / 482

页数：3

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